Zobrazeno 1 - 10
of 179
pro vyhledávání: '"A. V. SHEVLYAGIN"'
Autor:
Alexander V. Shevlyagin, Vladimir M. Il’yaschenko, Aleksandr A. Kuchmizhak, Eugeny V. Mitsai, Andrey V. Amosov, Semyon A. Balagan, Sergei A. Kulinich
Publikováno v:
Materials, Vol 15, Iss 19, p 6637 (2022)
This paper reports on a facile bottom-up method for the direct integration of a silicon (Si)-magnesium silicide (Mg2Si) heterojunction solar cell (HSC) with a textured rear reflector made of stainless steel (SS). Modified wet chemical etching and pos
Externí odkaz:
https://doaj.org/article/6393287c2cb0425699533ea00a4210b7
Autor:
N. G. Galkin, K. N. Galkin, A. V. Tupkalo, E. Yu. Subbotin, I. M. Chernev, A. V. Shevlyagin, V. V. Khovailo
Publikováno v:
Physics of the Solid State. 64:616-623
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c316a2047403d14c494f7eba458d0ed
https://doi.org/10.1134/s1063783422120034
https://doi.org/10.1134/s1063783422120034
Autor:
Aleksey P. Porfirev, Yulia Borodaenko, Alexander V. Shevlyagin, S. Syubaev, Aleksandr A. Kuchmizhak, Saulius Juodkazis, Evgeny L. Gurevich, Evgeny Modin, Andrey V. Gerasimenko, Eugeny Mitsai, A. Zhizhchenko, Stanislav O. Gurbatov, Svetlana N. Khonina
Publikováno v:
ACS Applied Materials & Interfaces. 13:54551-54560
Strong light localization inside the nanoscale gaps provides remarkable opportunities for creation of various medical and biosensing platforms stimulating an active search for inexpensive and easily scalable fabrication at a sub-100 nm resolution. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63454aba18e08099476bf9b5601c50c5
https://doi.org/10.1021/acsami.1c16249
https://doi.org/10.1021/acsami.1c16249
Autor:
Hirofumi Hoshida, Naofumi Nishikawa (尚史西川), Nikolay G. Galkin, Andrey Gerasimenko, Igor M. Chernev, Yoshikazu Terai, Keisuke Ohdaira, Alexander V. Shevlyagin, Anton K. Gutakovskii
Publikováno v:
Solar Energy. 211:383-395
n-Mg2Si/p-Si heterojunction solar cell with a 1.4 µm thick unintentionally doped (n = 3 × 1017 cm−3) silicide epitaxial layer on p-Si(1 1 1) (p = 5 × 1014 cm−3) was grown by low temperature (250 °C) molecular beam epitaxy. Heterojunction demo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4bf7fd4ed8c49b5c30287799c3273e7
https://doi.org/10.1016/j.solener.2020.09.085
https://doi.org/10.1016/j.solener.2020.09.085
Autor:
D. A. Pronin, A. V. Tsvetkov, S. A. Vakhmistrov, E. S. Mitin, E. E. Shestakov, Yu. M. Sustaeva, O. V. Shevlyagin, V. G. Simakov, V. A. Bragunets, I. A. Spirin
Publikováno v:
Combustion, Explosion, and Shock Waves. 56:716-724
The detonation of mixtures of highly dispersed PETN with sodium bicarbonate with a mass fraction of the latter up to 90% is investigated using radio interferometric method and electron-optical method NANOGATE-22 along with a method using a polyvinyli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d159a7c7537ad4e4301629d4fd041f1
https://doi.org/10.1134/s0010508220060118
https://doi.org/10.1134/s0010508220060118
Autor:
Natalie Tarasenka, Vladislav Puzikov, Eugeny Mitsai, Artem B. Cherepakhin, Aleksandr A. Kuchmizhak, Sergei A. Kulinich, Alexander V. Shevlyagin, Stanislav O. Gurbatov, A. M. Sergeev
Publikováno v:
Optics & Laser Technology. 147:107666
Hybrid nanomaterials with chemical composition integrating light-emitting low-loss semiconductors with plasmon-active metals are highly demanded for optoelectronics, nanophotonics and sensors. However, there is a still lack for high-performing and in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::285a293a9fe6672104137bef40048a49
https://doi.org/10.1016/j.optlastec.2021.107666
https://doi.org/10.1016/j.optlastec.2021.107666
Autor:
Igor M. Chernev, E.A. Chusovitin, A.A. Usenko, Vladimir Khovaylo, D. L. Goroshko, Konstantin N. Galkin, Nikolay G. Galkin, Alexander V. Shevlyagin
Publikováno v:
Defect and Diffusion Forum. 386:3-8
The growth, structure, optical, electrical and thermoelectric properties of calcium silicides of various compositions on silicon substrates with (100) and (111) orientations were experimentally studied. It was found that when the atoms of Ca and Si a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44473b1ca37f17fdc031d99b13005219
https://doi.org/10.4028/www.scientific.net/ddf.386.3
https://doi.org/10.4028/www.scientific.net/ddf.386.3
Autor:
E.A. Chusovitin, N. G. Galkin, S.A. Dotsenko, Alexander V. Shevlyagin, Anton K. Gutakovskii, D. L. Goroshko, S. V. Chusovitina
Publikováno v:
Scripta Materialia. 136:83-86
A double-layer heterostructure with embedded into single-crystal silicon matrix nanocrystals (NCs) of gallium antimonide (GaSb) was grown. The NCs were formed by solid phase epitaxy method using 1.6-nm-thick Ga-Sb stoichiometric mixture and annealing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4163c9239537e1d8574355fd315cb500
https://doi.org/10.1016/j.scriptamat.2017.04.004
https://doi.org/10.1016/j.scriptamat.2017.04.004
Autor:
A. Yu. Ustinov, A. M. Maslov, S. A. Dotsenko, S. A. Kitan, Alexander V. Shevlyagin, Andrey V. Gerasimenko, A. S. Gouralnik, E. A. Koblova, Igor M. Chernev, N. G. Galkin, Konstantin N. Galkin, V. M. Il'yashenko
Publikováno v:
Applied Surface Science. 439:282-284
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a4fa24c71816c7651480884e76eb1b8
https://doi.org/10.1016/j.apsusc.2017.12.237
https://doi.org/10.1016/j.apsusc.2017.12.237
Embedding of iron silicide nanocrystals into monocrystalline silicon: suppression of emersion effect
Autor:
Anton K. Gutakovskii, E.A. Chusovitin, Nikolay G. Galkin, Sergey A. Dotsenko, D. L. Goroshko, Alexander V. Shevlyagin
Publikováno v:
Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics 2017.
The formation of iron silicide nanocrystals (NCs) and their embedding into monocrystalline silicon was studied. Solid phase epitaxy of 0.4 nm Fe at 630 °C resulted in formation of NCs consisted of β-FeSi2 and e-FeSi phases. Annealing of NCs at 750
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26f8534ec2384c7942e5c00f2c467bab
https://doi.org/10.1117/12.2314675
https://doi.org/10.1117/12.2314675