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pro vyhledávání: '"A. V. Oleinich-Lysyuck"'
Publikováno v:
Semiconductors. 36:962-965
Changes in the temperature spectra of the internal friction and the effective shear modulus in single-crystal silicon were studied in the range of 20–400°C in relation to the annealing duration at 400°C. Stable peaks growing in the course of anne