Zobrazeno 1 - 10
of 25
pro vyhledávání: '"A. V. Obolenskii"'
Publikováno v:
Semiconductors. 56:360-366
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aa00576fe341f60607061b74b26e4ef
https://doi.org/10.1134/s1063782622070089
https://doi.org/10.1134/s1063782622070089
Autor:
A. S. Puzanov, V. V. Bibikova, I. Yu. Zabavichev, E. S. Obolenskaya, E. A. Tarasova, N. V. Vostokov, S. V. Obolenskii
Publikováno v:
Technical Physics Letters. 47:305-308
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4e76cb190778222f377d9d66ef747d5
https://doi.org/10.1134/s1063785021030287
https://doi.org/10.1134/s1063785021030287
Autor:
S. V. Obolenskii, E. V. Volkova, A. B. Loginov, B. A. Loginov, E. A. Tarasova, A. S. Puzanov, S. A. Korolev
Publikováno v:
Technical Physics Letters. 47:248-251
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abe234a1bbe94ade359b5d2a8cd66c26
https://doi.org/10.1134/s1063785021030123
https://doi.org/10.1134/s1063785021030123
Autor:
A. N. Trufanov, A. V. Kukinov, S. V. Obolenskii, M. N. Ivin, Tatyana V. Balashova, Olga V. Kuznetsova, Mikhail N. Bochkarev
Publikováno v:
Russian Journal of Coordination Chemistry. 45:420-426
The calculation of defects in the structures of the Sc, La, Nd, Sm, Tb, and Yb complexes with substituted phenolate and naphtholate ligands formed under the action of neutrons with a mean energy of 2 MeV shows that the shifts of the target atoms depe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::913a453af98d82ace80de65943a807b5
https://doi.org/10.1134/s1070328419050014
https://doi.org/10.1134/s1070328419050014
Publikováno v:
Moscow University Geology Bulletin. 71:112-120
The possibility of applying the continuous wavelet analysis on the basis of a Poissonian core for the processing and interpretation of gravity and magnetic survey data is considered. Based on the wavelet spectrum, W(x,h), reconstruction of the initia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1adfa67f83a49af83d3535ce20afea88
https://doi.org/10.3103/s0145875215060034
https://doi.org/10.3103/s0145875215060034
Publikováno v:
Semiconductors. 49:69-74
The transport of electrons in heterobipolar transistors with radiation defects is studied under conditions where the characteristic sizes of defect clusters and the distances between them can be comparable or can even exceed the sizes of the device b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ca7c01abc08d4778a66d1bd32ce465a
https://doi.org/10.1134/s1063782615010224
https://doi.org/10.1134/s1063782615010224
Autor:
A. V. Skupov, S. V. Obolenskii
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 1:207-211
A modification of the well-known TRIM algorithm for the Monte Carlo simulation of accelerated-ion trajectories in targets with a high density of structural defects is proposed. The spatial distributions of dopants and radiation-induced defects in a t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31e59696e51c219a6a9c220a0255faff
https://doi.org/10.1134/s1027451007020188
https://doi.org/10.1134/s1027451007020188
Autor:
E. V. Kiseleva, S. V. Obolenskii
Publikováno v:
Russian Microelectronics. 35:322-328
A method is proposed for the structural investigation of defect clusters produced by neutron irradiation of semiconductors. It involves simulation of defect formation and analysis of the distribution of point defects within individual clusters. The m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cb7bb748f451a6dc588bf14d0e03e3b
https://doi.org/10.1134/s1063739706050076
https://doi.org/10.1134/s1063739706050076
Publikováno v:
Russian Microelectronics. 34:359-364
The effect of neutron irradiation with a fluence reaching 5 × 1015 cm−2 on a quasi-ballistic MESFET is studied theoretically and experimentally. A marked improvement is observed in the device performance; it is attributed to quantum effects. The e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ccd8c9bc9037bb91d29dafe3b5f4e62
https://doi.org/10.1007/s11180-006-0004-4
https://doi.org/10.1007/s11180-006-0004-4
Publikováno v:
Semiconductors. 38:800-806
Characteristics of proton-irradiated epitaxial i-GaAs structures with an interdigitated system of electrodes are studied before and after exposure to combined γ and neutron radiation. In order to reduce the dark current of photodetectors, the electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d51c6acd48ca68c544fc5a0ebba66c6d
https://doi.org/10.1134/1.1777604
https://doi.org/10.1134/1.1777604