Zobrazeno 1 - 10
of 32
pro vyhledávání: '"A. V. Nezhdanov"'
Autor:
Dmitri E. Nikolichev, Ruslan N. Kriukov, Alexey V. Nezhdanov, Anton V. Zdoroveyshchev, Yuri M. Kuznetsov, Daniil A. Zdoroveyshchev, Valery P. Lesnikov, Michael V. Dorokhin, Polina B. Demina, Alexey A. Skrylev
Publikováno v:
Конденсированные среды и межфазные границы, Vol 25, Iss 3 (2023)
Silicon compounds have a wide range of electrical properties. In particular, the possibility of creating thermoelectric converters based on them looks extremely attractive. The use of most silicides as thermoelectrics today is limited by their low ef
Externí odkaz:
https://doaj.org/article/1a407871aee248dbbcd7488b30354246
Autor:
Dmitry S. Korolev, Kristina S. Matyunina, Alena A. Nikolskaya, Ruslan N. Kriukov, Alexey V. Nezhdanov, Alexey I. Belov, Alexey N. Mikhaylov, Artem A. Sushkov, Dmitry A. Pavlov, Pavel A. Yunin, Mikhail N. Drozdov, David I. Tetelbaum
Publikováno v:
Nanomaterials, Vol 12, Iss 11, p 1840 (2022)
A new method for creating nanomaterials based on gallium oxide by ion-beam synthesis of nanocrystals of this compound in a SiO2/Si dielectric matrix has been proposed. The influence of the order of irradiation with ions of phase-forming elements (gal
Externí odkaz:
https://doaj.org/article/3860753ae2764b7483c354de9bc96814
Autor:
Niranjan Kumar, Aleksey V. Nezhdanov, Ruslan M. Smertin, Vladimir N. Polkovnikov, Nikolay I. Chkhalo
Publikováno v:
Indian Journal of Physics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::524d49d14a00a93be93d2aebe6d8c03f
https://doi.org/10.1007/s12648-023-02752-6
https://doi.org/10.1007/s12648-023-02752-6
Autor:
Alexey T Kozakov, Niranjan Kumar, Valery G Vlasenko, Iliya V Pankov, Vadim A Volochaev, Anton A Scrjabin, Anatoly V Nikolskii, Aleksey V Nezhdanov, Ruslan M Smertin, Vladimir N Polkovnikov, Nikolay I Chkhalo
Publikováno v:
Bulletin of Materials Science. 46
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80f06b41a2bae12f09d428c6534afeba
https://doi.org/10.1007/s12034-022-02867-2
https://doi.org/10.1007/s12034-022-02867-2
Autor:
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, P. B. Demina, M. V. Dorokhin, M. N. Drozdov, D. A. Zdoroveyshchev, I. L. Kalentyeva, Yu. M. Kuznetsov, A. V. Kudrin, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky
Publikováno v:
Physics of the Solid State. 63:1593-1600
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6d5e2def68b40600fa25aff91842b98
https://doi.org/10.1134/s106378342109047x
https://doi.org/10.1134/s106378342109047x
Autor:
Yu. M. Kuznetsov, M. V. Dorokhin, A. V. Nezhdanov, D. A. Zdoroveyshchev, V. P. Lesnikov, A. I. Mashin
Publikováno v:
Semiconductors. 55:749-754
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef11965e4c90a48ab991c98c8b399b6f
https://doi.org/10.1134/s1063782621090104
https://doi.org/10.1134/s1063782621090104
Autor:
Niranjan Kumar, Aleksey V. Nezhdanov, Rushlan M. Smertin, Vladimir N. Polkovnikov, Nikolay I. Chkhalo, Vladimir A. Golyashov, Oleg E. Tereshchenko
Publikováno v:
Physical chemistry chemical physics : PCCP. 24(26)
Microstructural properties of the beryllium (Be) and silicon (Si) in periodic multilayer mirrors Be/Si with the variation of film thickness were comprehensively determined by Raman scattering. For the thinner films, the structure of Be evolved in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::164f0bcd8217c7d3ef09c0de1a59efdb
https://pubmed.ncbi.nlm.nih.gov/35730555
https://pubmed.ncbi.nlm.nih.gov/35730555
Akademický článek
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Autor:
Niranjan Kumar, Galina D Antisheva, Aleksey V Nezhdanov, Mikhail N Drozdov, Roman S Pleshkov, Pavel A Yunin, Vladimir N Polkovnikov, Nikolay I Chkhalo
Publikováno v:
Journal of Physics D: Applied Physics. 55:245301
The ambient atmospheric thermal stability of beryllium (Be) layers in Be/Mo and Be/W multilayer mirrors was investigated by Raman scattering. The physical characteristic of the transverse optical (TO) mode was considered for structural analysis of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::145ea8b3c6c39f147b7d63284f05f46e
https://doi.org/10.1088/1361-6463/ac5944
https://doi.org/10.1088/1361-6463/ac5944
Autor:
Niranjan Kumar, Aleksey V Nezhdanov, Sergey A Garakhin, Pavel A Yunin, Vladimir N Polkovnikov, Nikolay I Chkhalo, Aleksandr I Mashin
Publikováno v:
Journal of Physics D: Applied Physics. 55:175302
The crystallinity of the tungsten (W) phase was improved with an increase in the thickness of this layer in the periodic W/Si multilayer structure. Both the α- and β-W phases were grown simultaneously and the contribution of these phases was modifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b815594f2f1fc3f5d45443ea40c635f
https://doi.org/10.1088/1361-6463/ac4729
https://doi.org/10.1088/1361-6463/ac4729