Zobrazeno 1 - 10
of 103
pro vyhledávání: '"A. V. Malevskaya"'
Autor:
Viacheslav M. Andreev, Nikolay A. Kalyuzhnyy, Aleksandra V. Malevskaya, Mariia V. Nakhimovitch, Maxim Z. Shvarts
Publikováno v:
RUDN Journal of Engineering Research, Vol 25, Iss 1, Pp 75-85 (2024)
Photovoltaic conversion of laser radiation has found wide application in fiberoptic communication lines. Energy transfer via a laser beam is also relevant for remote power supply systems on Earth and in space. These systems can be used to power unman
Externí odkaz:
https://doaj.org/article/6bf8b2c75d8d400387c10a2184efac85
Publikováno v:
Semiconductors. 56:18-21
Autor:
A. V. Malevskaya, N. A. Kalyuzhnyy, D. A. Malevskii, S. A. Mintairov, A. M. Nadtochiy, M. V. Nakhimovich, F. Y. Soldatenkov, M. Z. Shvarts, V. M. Andreev
Publikováno v:
Semiconductors. 55:686-690
Autor:
A. V. Malevskaya, Yu. M. Zadiranov, V. M. Andreev, N. D. Il’inskaya, P. V. Pokrovskii, D. A. Malevskii
Publikováno v:
Technical Physics Letters. 47:114-117
—Studies have been carried out and a technology has been developed for the formation of a separating mesa structure in fabrication of multi-junction solar cells based on the GaInP/GaInAs/Ge heterostructure. Methods for etching of the heterostructur
Autor:
null V. M. Andreev, null V.R. Larionov, null P.V. Pokrovskii, null D. A. Malevskii, null R.A. Salii, null R.V. Levin, null F. Y. Soldatenkov, null N. A. Kalyuzhnyy, null A. V. Malevskaya
Publikováno v:
Technical Physics. 68:161
Development of lift-off technique of AlGaAs/GaAs- heterostructures, grown by the Metalorganic vapour-phase epitaxy, to GaAs carrier-substrate using silver-containing paste or Au-In compound has been carried out. Forming process of frontal ohmic conta
Publikováno v:
Technical Physics Letters. 47:208-210
We have studied the dynamics of air humidity in the interior of a concentrator photovoltaic (CPV) module equipped with air-drying device filled with moisture-absorbing material based on silica gel. A new design of the air-drying device was developed
Publikováno v:
Technical Physics Letters. 46:976-978
Methods for passivation and protection of p–n junctions at places of their emergence at the lateral surface of a mesa structure and for sealing-off of multijunction solar cells based on a GaInP/GaAs/Ge structure have been studied. Protective coatin
Publikováno v:
Technical Physics Letters. 46:523-525
The power generation of the phtovoltaic installations depends on the concentration modules’ efficiency and the Sun tracking accuracy. We have developed a system for monitoring instant tracking accuracy based on a recorder and a projecting system of
Publikováno v:
Technical Physics Letters. 45:1230-1232
The postgrowth processing of mesa structures for multijunction solar cells based on GaInP/GaInAs/Ge heterostructure has been studied. Methods of wet chemical and electrochemical etching are considered, and a technology of forming a separation mesa st
Autor:
E. V. Kontrosh, D. A. Malevskii, N. D. Il’inskaya, M. Z. Shvarts, V. S. Kalinovskii, A. V. Malevskaya, V. M. Andreev
Publikováno v:
Technical Physics. 63:1177-1181
A multilayer system of ohmic contacts for GaAs/AlGaAs photovoltaic converters has been developed. A method of ohmic contact blackening is suggested with the aim of improving the coefficient of optical signal reflection from an Ag/Au/Ag multilayer con