Zobrazeno 1 - 10
of 289
pro vyhledávání: '"A. V. Levitskii"'
Autor:
Galia Pozina, Azat R. Gubaydullin, Maxim I. Mitrofanov, Mikhail A. Kaliteevski, Iaroslav V. Levitskii, Gleb V. Voznyuk, Evgeniy E. Tatarinov, Vadim P. Evtikhiev, Sergey N. Rodin, Vasily N. Kaliteevskiy, Leonid S. Chechurin
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
Abstract We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by Metal Organic Vapor Phase Epitaxy (MOVPE). The method includes depositing a silicon ni
Externí odkaz:
https://doaj.org/article/b2748e62604b4357b63fc69663388f22
Publikováno v:
Russian Aeronautics. 65:278-287
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dd35e2b61eeadbbde80787005324484
https://doi.org/10.3103/s1068799822020076
https://doi.org/10.3103/s1068799822020076
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Alexander V. Ignatiev, Elena I. Demonterova, V. I. Levitskii, A. I. Khanchuk, I. V. Levitskii, T. A. Velivetskaya, S. V. Vysotskiy
Publikováno v:
Doklady Earth Sciences. 491:238-242
The present paper presents new U–Pb and Sm–Nd age data obtained for granulites of the Cheremshanskaya Unit enclosing metamorphosed volcano-sedimentary sulfide ores, in which sulfur isotope mass-independent fractionation (MIF–S) was established.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::779094e70600575242c93ea07b8d0e2e
https://doi.org/10.1134/s1028334x20040212
https://doi.org/10.1134/s1028334x20040212
Autor:
K. M. Morozov, I. V. Levitskii, M. A. Kaliteevski, A. V. Belonovskii, S. N. Rodin, V. P. Evtikhiev, Elizaveta I. Girshova, Konstantin A. Ivanov, Galia Pozina, M. I. Mitrofanov
Publikováno v:
Semiconductors. 54:127-130
The GaN planar hexagonal microcavities are grown by the selective vapor-phase epitaxy technique. The spectra are measured by the low-temperature cathodoluminescence method using a scanning electron microscope. The obtained spectra show a huge Rabi sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d33f49132869d0ab1146dacdaee50fb
https://doi.org/10.1134/s1063782620010042
https://doi.org/10.1134/s1063782620010042
Autor:
S. N. Rodin, A. V. Sakharov, G. V. Voznyuk, M. A. Kaliteevskii, A. F. Tsatsul’nikov, V. P. Evtikhiev, I. V. Levitskii, S. O. Usov, M. I. Mitrofanov, W. V. Lundin
Publikováno v:
Semiconductors. 53:2121-2124
The effect of annealing temperature and time on the luminescence intensity of the InGaN/GaN heterostructure subjected to ion beam etching was studied. We show that annealing at a temperature of 1100°C makes it possible to eliminate the radiation def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a50b1c58de65f4e6dbae1c7342d1ef2
https://doi.org/10.1134/s106378261912025x
https://doi.org/10.1134/s106378261912025x
Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching
Autor:
M. I. Mitrofanov, M. N. Mizerov, Ya. V. Levitskii, V. P. Evtikhiev, G. V. Voznyuk, D. N. Nikolayev
Publikováno v:
Semiconductors. 53:1545-1549
The ion-beam etching of AlGaAs/GaAs heterostructures gives rise to radiation defects and, as a result, leads to photoluminescence quenching. Annealing at 620°C in an atmosphere of As almost completely restores the quantum efficiency of photoluminesc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00562f5be780b163e8e000b1dc2e1052
https://doi.org/10.1134/s1063782619110101
https://doi.org/10.1134/s1063782619110101
Autor:
Vladislav Powerman, Ivan V. Levitskii, Ludmila Pavlova, Elena I. Demonterova, V. I. Levitskii, Fernando Corfu, Vadim S. Kamenetsky, L. Z. Reznitskii, V. M. Savatenkov, Alexei V. Ivanov
Publikováno v:
Lithos. :88-100
The Siberian Craton assembled in a Paleoproterozoic episode at about 1.88 Ga by the collision older blocks, followed at about 1.86 Ga by post-collisional felsic magma. We have found a set of extremely fresh mica-bearing lamprophyre-looking rocks with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0756b3f168bb272c12163bff27c528f
https://doi.org/10.1016/j.lithos.2019.01.015
https://doi.org/10.1016/j.lithos.2019.01.015
Autor:
Alexey V, Belonovski, Iaroslav V, Levitskii, Konstantin M, Morozov, Galia, Pozina, Mikhail A, Kaliteevski
Publikováno v:
Optics express. 28(9)
The interaction of an exciton and cavity modes is considered in planar meso-cavities, which have lateral sizes corresponding to few wavelengths. In meso-cavities, the frequency interval between the optical modes is comparable or smaller than the valu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::88625d69ed590c813599867e425e0fac
https://pubmed.ncbi.nlm.nih.gov/32403761
https://pubmed.ncbi.nlm.nih.gov/32403761
Autor:
M. I. Mitrofanov, V. P. Evtikhiev, A. F. Tsatsul’nikov, A. V. Sakharov, W. V. Lundin, S. O. Usov, S. N. Rodin, I. V. Levitskii
Publikováno v:
Semiconductors. 52:1357-1362
The selective epitaxial growth of GaN by metalorganic vapor-phase epitaxy combined with ion-beam etching is investigated. To this end, partially masked GaN epitaxial layers are fabricated by depositing a thin Si3N4 layer onto the surface in a single
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1efb0d0d1212506688e2e7dd0806808
https://doi.org/10.1134/s106378261810007x
https://doi.org/10.1134/s106378261810007x