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pro vyhledávání: '"A. V. Kobylyatskii"'
Autor:
A. V. Kobylyatskii, Anna B. Boruzdina, I. I. Shvetsov-Shilovskii, A. V. Ulanova, N. G. Grigor’ev, Yu. M. Gerasimov
Publikováno v:
Russian Microelectronics. 48:268-272
This article deals with a study of radiation-induced leakages between n-regions of various types using test structures fabricated according to the 0.18-µm CMOS technology. It is shown that, depending on the radiation exposure dose, the leakages betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::120dca838cdb0f9cc9b81a8f460c6833
https://doi.org/10.1134/s1063739719030028
https://doi.org/10.1134/s1063739719030028
