Zobrazeno 1 - 4
of 4
pro vyhledávání: '"A. V. Klekachev"'
Autor:
Bart Dierickx, Alexander V Klekachev, Matthew R Angle, Robert Edgington, Sampsa Veijalainen, Alison M Stuckey, Bryan Kerr, Peter Orel, Matthew S Hopper, Yifan Kong, Yeena Ng, Malgorzata Straka, Chris LaReau, Kunal Sahasrabuddhe, Sashank Shivakumar, Mina-Elraheb S Hanna, Aditya Pratap Singh, Amir Babaie-Fishani, Takashi D. Y. Kozai, Ingrid McNamara, Kevin M Boergens, Chong Xie, Harbaljit S. Sohal, Peng Gao, Devin Fell, Daniel Pouzzner, Tyler Michael Stern, Kurtis Nishimura, Vikash Gilja, Aleksandar Tadić, Bert Luyssaert, Aamir A. Khan
Publikováno v:
J Neural Eng
Journal of neural engineering, vol 18, iss 1
Journal of neural engineering, vol 18, iss 1
Objective Decoding neural activity has been limited by the lack of tools available to record from large numbers of neurons across multiple cortical regions simultaneously with high temporal fidelity. To this end, we developed the Argo system to recor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da8415d1c3707705fe58385d434e37cb
https://europepmc.org/articles/PMC8607496/
https://europepmc.org/articles/PMC8607496/
Publikováno v:
Russian Microelectronics. 37:277-282
An instrument is presented for measuring major MOSFET parameters. It implements the method of charge pumping as well as providing static I–V characteristics. The former capability enables one to investigate the quality of semiconductor-insulator in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af3d4bb93992356ca5f0bb022b703f22
https://doi.org/10.1134/s1063739708040082
https://doi.org/10.1134/s1063739708040082
Autor:
Marc Heyns, Inge Asselberghs, Byung Jin Cho, S. N. Kuznetsov, Marleen H. van der Veen, Johan Hofkens, Mirco Cantoro, Jun-ichi Hotta, Alexander V. Klekachev, Jeong Hun Mun, Andre Stesmans, Stefan De Gendt
Publikováno v:
SPIE Proceedings.
Graphene possesses unique physical properties, due to its specific energy bands configuration, substantially different from that of materials traditionally employed in solid-state optoelectronics. Among the variety of remarkable properties, strong fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27db3772e9c865e333a2344f70ab10e4
https://doi.org/10.1117/12.930082
https://doi.org/10.1117/12.930082
Publikováno v:
SPIE Proceedings.
MOSFET analyzer is developed to extract most important parameters of transistors. Instead of routine DC transfer and output characteristics, analyzer provides an evaluation of interface states density by applying charge pumping technique. There are t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31b89fe6754b2970da19a46478669010
https://doi.org/10.1117/12.683497
https://doi.org/10.1117/12.683497