Zobrazeno 1 - 10
of 40
pro vyhledávání: '"A. V. Gorbatyuk"'
Publikováno v:
Metallurgist. 65:465-472
This paper describes an algorithm for optimizing process flow diagrams, as well as the order in which the parameters of mineral waste recycling equipment should be optimized. We developed a flow chart for this waste-recycling process-train design ana
Autor:
P. V. Borisov, N. V. Gorbatyuk, A. N. Pashkov, Zh. Kh. Mamatkulov, R. Yu. Surkova, L. V. Sedykh
Publikováno v:
Izvestiya. Ferrous Metallurgy. 64:366-373
The constant increase in the consumption of ferrous, non-ferrous, precious and rare metals in the national economy requires an increase in the efficiency of minerals mining and processing. One of the main methods of enrichment used in the technologic
Autor:
L. V. Sedykh, P. V. Borisov, A. N. Pashkov, N. V. Gorbatyuk, R. Yu. Surkova, Zh. Kh. Mamatkulov
Publikováno v:
Steel in Translation. 51:308-313
Autor:
N. V. Gorbatyuk
Publikováno v:
Mathematical Notes. 109:152-154
Autor:
A. V. Gorbatyuk, Boris Ivanov
Publikováno v:
Semiconductors. 53:524-529
For the first time, a self-consistent computational–theoretical description of the physical processes in reversely switched dynistors (RSDs) is obtained when operating in pulse-frequency modes with a limited heat sink. A simplified representation o
Autor:
Boris Ivanov, A. V. Gorbatyuk
Publikováno v:
Technical Physics Letters. 44:1241-1244
The effects of a transverse temperature gradient in reversively switched-on dynistors have been studied. Taking into account these effects is important for high-voltage frequency dynistor assemblies because of the problems of a distributed cooling of
Autor:
Boris Ivanov, A. V. Gorbatyuk
Publikováno v:
Semiconductors. 51:803-811
A new method for triggering reversely switched dynistors (RSDs) into submicrosecond modes with high current-rise rates being switched at a substantially lower primary ignition threshold is proposed and studied numerically in detail by computer simula
Publikováno v:
Russian Electrical Engineering. 88:77-80
Switching of equivalent silicon insulated-gate bipolar transistors, such as carrier-stored trenchgate bipolar transistors (CSTBTs) and hybrid static induction transistor/metal–oxide–semiconductor (SIT–MOS) thyristors (HSMTs), from a blocking st
Publikováno v:
Semiconductors. 50:957-962
The possibility of optimizing high-voltage hybrid SIT–MOP transistors (HSMTs) by means of a local reduction in lifetime near the anode emitter and/ or by decreasing its injection efficiency by three different methods is studied using two-dimensiona
Autor:
B. V. Ivanov, A. V. Gorbatyuk
Publikováno v:
Technical Physics. 60:1198-1203
Important features of the mechanisms of switching submicrosecond current pulses are investigated using 2D computer simulation of physical processes in high-voltage reversely switched dynistors (RSDs). At the fronts of these pulses, large voltage surg