Zobrazeno 1 - 10
of 26
pro vyhledávání: '"A. V. Dolbik"'
Autor:
A. I. Drapeza, S. K. Lazaruk, G. A. Skorokhod, V. A. Loban, T. I. Orekhovskaya, A. I. Khmelnitsky, E. I. Gudkova, A. V. Dolbik
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 20, Iss 5, Pp 73-81 (2022)
The electrokinetic possibilities of separation and concentration of S.aureus bacteria in human whole blood (test mixture) were studied using a new design of a four-electrode biosensor chip format with transparent microelectrodes. In the measurements,
Externí odkaz:
https://doaj.org/article/dc35860524c048e398359ceb80f67dce
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 3, Pp 63-71 (2020)
The paper analyzes the parameters of silicon avalanche LEDs and their use for electron-optical signal transmission systems. The advantages of silicon avalanche LEDs are shown, among which high speed and compatibility with silicon technology should be
Externí odkaz:
https://doaj.org/article/0aca1a34036c4a6d8a055f967b06199b
Autor:
A. V. Dolbik, A. Yu. Zubov, S. N. Krisevich, A. S. Sychevich, A. V. Korotkevich, S. K. Lazarouk, V. A. Labunov
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 6, Pp 90-93 (2019)
Nanostructured porous silicon impregnated by solid state oxidants has been studied in order to provide the mechanical impulse for jet-propulsion microsystems. The system with jet-propulsion movement on a silicon chip has been used for impulse measure
Externí odkaz:
https://doaj.org/article/701c36ce14ea40d6975618b54eb3388b
OPTICAL INTERCONNECTS BETWEEN SILICON CHIPS BASED ON LIGHT-EMITTING DIODES ON NANOSTRUCTURED SILICON
Publikováno v:
Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes to Nanomeeting-2017
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e164137a3b74817223adde566ed3a97
https://doi.org/10.1142/9789813224537_0111
https://doi.org/10.1142/9789813224537_0111
Autor:
V. K. Ilkov, T. A. Kozlova, S. Lazarouk, A. V. Dolbik, A. A. Leshok, Le Dinh Vi, V. A. Labunov
Publikováno v:
International Journal of Nanoscience. 18:1940091
Design and manufacturing technology of 3D silicon photonic structures with optical interconnections through microchannel vias interposers were developed. Silicon chips placed over each other were separated by the silicon microchannel vias interposer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cd558e67cee9b0ee9ef4f0fe959e251
https://doi.org/10.1142/s0219581x1940091x
https://doi.org/10.1142/s0219581x1940091x
Publikováno v:
International Journal of Nanoscience. 18:1940089
Porous silicon layers have been formed by electrochemical anodization of [Formula: see text]- and [Formula: see text]-type Si substrates. The volume of hydrogen desorbed from the surface of porous silicon after the anodic treatment was measured to be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a9e04b43b4fbe949eaad3eba14ef9e9
https://doi.org/10.1142/s0219581x19400891
https://doi.org/10.1142/s0219581x19400891
Publikováno v:
Journal of Engineering Physics and Thermophysics. 81:617-621
This paper presents the results of experimental studies of the process of obtaining hydrogen with the use of micro-and nanostructured silicon powders. From the results of the investigations the optimum size of micro-and nanoparticles of silicon enabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2590b3291c110cee338181b4512a79c4
https://doi.org/10.1007/s10891-008-0073-9
https://doi.org/10.1007/s10891-008-0073-9
Publikováno v:
Russian Microelectronics. 36:153-158
For doped polysilicon films, an experimental investigation is presented into the variation of temperature coefficient of resistance (TCR) with formation conditions, the dopants being rare-earth elements (Eu, Gd, and Yb), oxygen, germanium, and implan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::065b23ba32b2a929efd4e2382b447186
https://doi.org/10.1134/s1063739707030031
https://doi.org/10.1134/s1063739707030031
Publikováno v:
Russian Microelectronics. 36:49-52
It is established by experiment that the densification of a porous-silicon (PSi) film starts at its surface, where the material is most discontinuous. The film-wafer system tends to thermal equilibrium by downward mass transport along voids to a dept
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33eab739d32d300ba459b3b51271674d
https://doi.org/10.1134/s1063739707010064
https://doi.org/10.1134/s1063739707010064
Publikováno v:
JETP Letters. 84:581-584
The kinetics of the combustion and explosion of nanostructured hydrated porous silicon has been analyzed in a duration range from 100 μs to 1 s. It has been shown that the presence of hydrogen in silicon nanostructures increases the energy yield of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b6e6730c4ba955467c67fa980be007e
https://doi.org/10.1134/s0021364006230020
https://doi.org/10.1134/s0021364006230020