Zobrazeno 1 - 10
of 1 405
pro vyhledávání: '"A. Turchanin"'
Autor:
Ngo, Gia Quyet, Cholsuk, Chanaprom, Thiele, Sebastian, Gan, Ziyang, George, Antony, Pezoldt, Joerg, Turchanin, Andrey, Vogl, Tobias, Eilenberger, Falk
Two-dimensional transition metal dichalcogenides (TMDs) are highly appealing for gas sensors, lab-on-a-chip devices and bio-sensing applications because of their strong light-matter interaction and high surface-to-volume ratio. The ability to grow th
Externí odkaz:
http://arxiv.org/abs/2409.05693
Autor:
A. George, M. V. Fistul, M. Gruenewald, D. Kaiser, T. Lehnert, R. Mupparapu, C. Neumann, U. Hübner, M. Schaal, N. Masurkar, L. M. R. Arava, I. Staude, U. Kaiser, T. Fritz, A. Turchanin
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-8 (2021)
Abstract Monolayer transition metal dichalcogenides (TMD) have numerous potential applications in ultrathin electronics and photonics. The exposure of TMD-based devices to light generates photo-carriers resulting in an enhanced conductivity, which ca
Externí odkaz:
https://doaj.org/article/4ea6875eed2f449a9ee535e70f143782
Autor:
Bucher, Tobias, Fedorova, Zlata, Abasifard, Mostafa, Mupparapu, Rajeshkumar, Wurdack, Matthias J., Najafidehaghani, Emad, Gan, Ziyang, Knopf, Heiko, George, Antony, Eilenberger, Falk, Pertsch, Thomas, Turchanin, Andrey, Staude, Isabelle
The valley degree of freedom is one of the most intriguing properties of atomically thin transition metal dichalcogenides. Together with the possibility to address this degree of freedom by valley-contrasting optical selection rules, it has the poten
Externí odkaz:
http://arxiv.org/abs/2401.13372
Autor:
Tobias Bucher, Zlata Fedorova, Mostafa Abasifard, Rajeshkumar Mupparapu, Matthias J. Wurdack, Emad Najafidehaghani, Ziyang Gan, Heiko Knopf, Antony George, Falk Eilenberger, Thomas Pertsch, Andrey Turchanin, Isabelle Staude
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract The valley degree of freedom in atomically thin transition metal dichalcogenides, coupled with valley-contrasting optical selection rules, holds great potential for future electronic and optoelectronic devices. Resonant optical nanostructure
Externí odkaz:
https://doaj.org/article/1f2f8114b7c94742b9a00c633134bf90
Autor:
Lamsaadi, Hassan, Beret, Dorian, Paradisanos, Ioannis, Renucci, Pierre, Lagarde, Delphine, Marie, Xavier, Urbaszek, Bernhard, Gan, Ziyang, George, Antony, Watanabe, Kenji, Taniguchi, Takashi, Turchanin, Andrey, Lombez, Laurent, Combe, Nicolas, Paillard, Vincent, Poumirol, Jean-Marie
Publikováno v:
Nature Communications volume 14, Article number: 5881 (2023)
Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile
Externí odkaz:
http://arxiv.org/abs/2306.13352
Autor:
Md. Anamul Hoque, Antony George, Vasudev Ramachandra, Emad Najafidehaghani, Ziyang Gan, Richa Mitra, Bing Zhao, Satyaprakash Sahoo, Maria Abrahamsson, Qiuhua Liang, Julia Wiktor, Andrey Turchanin, Sergey Kubatkin, Samuel Lara-Avila, Saroj P. Dash
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-7 (2024)
Abstract Two-dimensional (2D) semiconductors and van der Waals (vdW) heterostructures with graphene have generated enormous interest for future electronic, optoelectronic, and energy-harvesting applications. The electronic transport properties and co
Externí odkaz:
https://doaj.org/article/47132b75a0b34b9aad5964af34e3fc81
Autor:
Rosati, Roberto, Paradisanos, Ioannis, Huang, Libai, Gan, Ziyang, George, Antony, Watanabe, Kenji, Taniguchi, Takashi, Lombez, Laurent, Renucci, Pierre, Turchanin, Andrey, Urbaszek, Bernhard, Malic, Ermin
The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be c
Externí odkaz:
http://arxiv.org/abs/2302.02617
Autor:
Zahra Fekri, Phanish Chava, Gregor Hlawacek, Mahdi Ghorbani‐Asl, Silvan Kretschmer, Wajid Awan, Vivek Mootheri, Tommaso Venanzi, Natalia Sycheva, Antony George, Andrey Turchanin, Kenji Watanabe, Takashi Taniguchi, Manfred Helm, Arkady V. Krasheninnikov, Artur Erbe
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 9, Pp n/a-n/a (2024)
Abstract This study explores defect engineering in 2D materials using ion beam irradiation to modify the electrical and optical properties with potential in advancing quantum electronics and photonics. Helium and neon ions ranging from 5 to 7.5 keV a
Externí odkaz:
https://doaj.org/article/e08136aa34fc4c69b664e9743e4bb96d
Autor:
Ziyang Gan, Rayantan Sadhukhan, Christof Neumann, Nandita Mohandas, Emad Najafidehaghani, Manuel Mundszinger, Johannes Biskupek, Ute Kaiser, Tharangattu N. Narayanan, Antony George, Andrey Turchanin
Publikováno v:
Materials Today Catalysis, Vol 6, Iss , Pp 100060- (2024)
Emerging as a promising alternative to expensive platinum-based catalysts for electrocatalytic hydrogen evolution reaction (HER), molybdenum disulfide (MoS2) stands out for its favourable thermodynamic properties. However, the catalytic activity of M
Externí odkaz:
https://doaj.org/article/de84e1e625a14d0389b8e476bc9ef389
Autor:
Stroganov, Vladislav, Hüger, Daniel, Neumann, Christof, Noethel, Tabata, Steinert, Michael, Huebner, Uwe, Turchanin, Andrey
Atomically thin molecular carbon nanomembranes (CNMs) with intrinsic sub-nanometer porosity are considered as promising candidates for next generation filtration and gas separation applications due to their extremely low thickness, energy efficiency
Externí odkaz:
http://arxiv.org/abs/2209.01778