Zobrazeno 1 - 10
of 1 380
pro vyhledávání: '"A. Turchanin"'
Autor:
A. George, M. V. Fistul, M. Gruenewald, D. Kaiser, T. Lehnert, R. Mupparapu, C. Neumann, U. Hübner, M. Schaal, N. Masurkar, L. M. R. Arava, I. Staude, U. Kaiser, T. Fritz, A. Turchanin
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-8 (2021)
Abstract Monolayer transition metal dichalcogenides (TMD) have numerous potential applications in ultrathin electronics and photonics. The exposure of TMD-based devices to light generates photo-carriers resulting in an enhanced conductivity, which ca
Externí odkaz:
https://doaj.org/article/4ea6875eed2f449a9ee535e70f143782
Autor:
Bucher, Tobias, Fedorova, Zlata, Abasifard, Mostafa, Mupparapu, Rajeshkumar, Wurdack, Matthias J., Najafidehaghani, Emad, Gan, Ziyang, Knopf, Heiko, George, Antony, Eilenberger, Falk, Pertsch, Thomas, Turchanin, Andrey, Staude, Isabelle
The valley degree of freedom is one of the most intriguing properties of atomically thin transition metal dichalcogenides. Together with the possibility to address this degree of freedom by valley-contrasting optical selection rules, it has the poten
Externí odkaz:
http://arxiv.org/abs/2401.13372
Autor:
Md. Anamul Hoque, Antony George, Vasudev Ramachandra, Emad Najafidehaghani, Ziyang Gan, Richa Mitra, Bing Zhao, Satyaprakash Sahoo, Maria Abrahamsson, Qiuhua Liang, Julia Wiktor, Andrey Turchanin, Sergey Kubatkin, Samuel Lara-Avila, Saroj P. Dash
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-7 (2024)
Abstract Two-dimensional (2D) semiconductors and van der Waals (vdW) heterostructures with graphene have generated enormous interest for future electronic, optoelectronic, and energy-harvesting applications. The electronic transport properties and co
Externí odkaz:
https://doaj.org/article/47132b75a0b34b9aad5964af34e3fc81
Autor:
Lamsaadi, Hassan, Beret, Dorian, Paradisanos, Ioannis, Renucci, Pierre, Lagarde, Delphine, Marie, Xavier, Urbaszek, Bernhard, Gan, Ziyang, George, Antony, Watanabe, Kenji, Taniguchi, Takashi, Turchanin, Andrey, Lombez, Laurent, Combe, Nicolas, Paillard, Vincent, Poumirol, Jean-Marie
Publikováno v:
Nature Communications volume 14, Article number: 5881 (2023)
Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile
Externí odkaz:
http://arxiv.org/abs/2306.13352
Autor:
Rosati, Roberto, Paradisanos, Ioannis, Huang, Libai, Gan, Ziyang, George, Antony, Watanabe, Kenji, Taniguchi, Takashi, Lombez, Laurent, Renucci, Pierre, Turchanin, Andrey, Urbaszek, Bernhard, Malic, Ermin
The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be c
Externí odkaz:
http://arxiv.org/abs/2302.02617
Autor:
Stroganov, Vladislav, Hüger, Daniel, Neumann, Christof, Noethel, Tabata, Steinert, Michael, Huebner, Uwe, Turchanin, Andrey
Atomically thin molecular carbon nanomembranes (CNMs) with intrinsic sub-nanometer porosity are considered as promising candidates for next generation filtration and gas separation applications due to their extremely low thickness, energy efficiency
Externí odkaz:
http://arxiv.org/abs/2209.01778
Autor:
Kuppadakkath, Athira, Najafidehaghani, Emad, Gan, Ziyang, Tuniz, Alessandro, Ngo, Gia Quyet, Knopf, Heiko, Löchner, Franz J. F., Abtahi, Fatemeh, Bucher, Tobias, Shradha, Sai, Käsebier, Thomas, Palomba, Stefano, Felde, Nadja, Paul, Pallabi, Ullsperger, Tobias, Schröder, Sven, Szeghalmi, Adriana, Pertsch, Thomas, Staude, Isabelle, Zeitner, Uwe, George, Antony, Turchanin, Andrey, Eilenberger, Falk
We report for the first time the direct growth of Molybdenum disulfide (MoS$_2$) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on nanostructured ph
Externí odkaz:
http://arxiv.org/abs/2206.02526
Autor:
Eobaldt, Edwin, Vitale, Francesco, Zapf, Maximilian, Lapteva, Margarita, Hamzayev, Tarlan, Gan, Ziyang, Najafidehaghani, Emad, Neumann, Christof, George, Antony, Turchanin, Andrey, Soavi, Giancarlo, Ronning, Carsten
Publikováno v:
Nanoscale 2022, 14, 6822-6829
Mixed dimensional hybrid structures have recently gained increasing attention as promising building blocks for novel electronic and optoelectronic devices. In this context, hybridization of semiconductor nanowires with two-dimensional materials could
Externí odkaz:
http://arxiv.org/abs/2205.13379
Autor:
Gan, Ziyang, Paradisanos, Ioannis, Estrada-Real, Ana, Picker, Julian, Najafidehaghani, Emad, Davies, Francis, Neumann, Christof, Robert, Cedric, Wiecha, Peter, Watanabe, Kenji, Taniguchi, Takashi, Marie, Xavier, Krasheninnikov, Arkady V., Urbaszek, Bernhard, George, Antony, Turchanin, Andrey
We report one-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these two-dim
Externí odkaz:
http://arxiv.org/abs/2205.04751
Autor:
Beret, Dorian, Paradisanos, Ioannis, Gan, Ziyang, dehaghani, Emad Naja, George, Antony, Lehnert, Tibor, Biskupek, Johannes, Shree, Shivangi, Estrada-Real, Ana, Lagarde, Delphine, Poumirol, Jean-Marie, Paillard, Vincent, Watanabe, Kenji, Taniguchi, Takashi, Marie, Xavier, Kaiser, Ute, Renucci, Pierre, Lombez, Laurent, Turchanin, Andrey, Urbaszek, Bernhard
Publikováno v:
npj 2D Materials and Applications, volume 6, Article number: 84 (2022) (with additional near-field data)
Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that consti
Externí odkaz:
http://arxiv.org/abs/2204.07351