Zobrazeno 1 - 10
of 374
pro vyhledávání: '"A. Toral-Lopez"'
Autor:
Pasadas, Francisco, Medina-Rull, Alberto, Ruiz, Francisco G., Ramos-Silva, Javier Noe, Pacheco-Sanchez, Anibal, Pardo, Mari Carmen, Toral-Lopez, Alejandro, Godoy, Andrés, Ramírez-García, Eloy, Jiménez, David, Marin, Enrique G.
Exploiting ambipolar electrical conductivity based on graphene field-effect transistors has raised enormous interest for high-frequency (HF) analog electronics. Controlling the device polarity, by biasing the graphene transistor around the vertex of
Externí odkaz:
http://arxiv.org/abs/2309.08519
Autor:
Cuesta-Lopez, J., Ganeriwala, M. D., Marin, E. G., Toral-Lopez, A., Pasadas, F., Ruiz, F. G., Godoy, A.
Publikováno v:
Journal of Applied Physics; 9/28/2024, Vol. 136 Issue 12, p1-9, 9p
Autor:
Grour, Tarek El, Pasadas, Francisco, Medina-Rull, Alberto, Najari, Montassar, Marin, Enrique G., Toral-Lopez, Alejandro, Ruiz, Francisco G., Godoy, Andrés, Jiménez, David, El-Mir, Lassaad
Publikováno v:
IEEE Transactions on Electron Devices, 68(11), 5916-5919, 2021
We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on two-dimensional (2D) materials. The electrostatics along the electrolyte-gated 2D-semiconductor stack is treated by solving the Poisson equation in
Externí odkaz:
http://arxiv.org/abs/2109.06585
Autor:
Toral-Lopez, A., Pasadas, F., Marin, E. G., Medina-Rull, A., Gonzalez-Medina, J. M., Ruiz, F. G., Jiménez, D., Godoy, A.
Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of numerical tools and physically-based models able to support the experime
Externí odkaz:
http://arxiv.org/abs/2103.08519
Autor:
Medina-Rull, A., Pasadas, F., Marin, E. G., Toral-Lopez, A., Cuesta, J., Godoy, A., Jiménez, D., Ruiz, F. G.
Publikováno v:
IEEE Access, 2020, vol. 8, p. 209055-209063
We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists of a graphene field-effect transistor (GFET) used in a common source amplifier configuration. The pha
Externí odkaz:
http://arxiv.org/abs/2103.06378
Publikováno v:
Discover Nano, Vol 18, Iss 1, Pp 1-10 (2023)
Abstract Run-time device-level reconfigurability has the potential to boost the performance and functionality of numerous circuits beyond the limits imposed by the integration density. The key ingredient for the implementation of reconfigurable elect
Externí odkaz:
https://doaj.org/article/f4f9947c21f3482999ed98d5457bd419
Autor:
Pasadas, Francisco, Marin, Enrique G., Toral-Lopez, Alejandro, Ruiz, Francisco G., Godoy, Andrés, Park, Saungeun, Akinwande, Deji, Jiménez, David
Publikováno v:
npj 2D Materials and Applications, vol. 3(47), 2019
We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain current, terminal charges and intrinsic capacitances. The drain curre
Externí odkaz:
http://arxiv.org/abs/2002.01499
Autor:
Toral-Lopez, A., Marin, E. G., Pasadas, F., Gonzalez-Medina, J. M., Ruiz, F. G., Jiménez, D., Godoy, A.
Publikováno v:
Nanomaterials 2019, 9, 1027
Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-effect} transistors (GFETs) with enhanced RF performance have attracte
Externí odkaz:
http://arxiv.org/abs/1911.06360
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Akademický článek
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