Zobrazeno 1 - 10
of 715
pro vyhledávání: '"A. Tiberj"'
Autor:
T. V. Shubina, W. Desrat, M. Moret, A. Tiberj, O. Briot, V. Yu. Davydov, A. V. Platonov, M. A. Semina, B. Gil
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
The optical properties of layered InSe aren’t fully understood. Here, the authors observe the exciton, biexciton, and P-band of exciton-exciton scattering in the photoluminescence spectrum of InSe, and calculate an exciton binding energy value of
Externí odkaz:
https://doaj.org/article/608f0a1df28848d99d3499685ff68fc2
Publikováno v:
Journal of Applied Physics; 7/14/2024, Vol. 136 Issue 2, p1-6, 6p
Publikováno v:
European Values: Trends and Divides Over Thirty Years. 17:200-215
We demonstrate the successive appearance of the exciton, biexciton, and P band of the exciton-exciton scattering with increasing excitation power in the photoluminescence of indium selenide layered crystals. The strict energy and momentum conservatio
Externí odkaz:
http://arxiv.org/abs/1904.00390
Autor:
Tiberj, Vincent
Publikováno v:
Esprit, 2020 Nov 01(469), 43-52.
Externí odkaz:
https://www.jstor.org/stable/26996884
Autor:
Jouault, B., Charpentier, S., Massarotti, D., Michon, A., Paillet, M., Huntzinger, J. -R., Tiberj, A., Zahab, A., Bauch, T., Lucignano, P., Tagliacozzo, A., Lombardi, F., Tafuri, F.
Graphene on silicon carbide (SiC) has proved to be highly successful in Hall conductance quantization for its homogeneity at the centimetre scale. Robust Josephson coupling has been measured in co-planar diffusive Al/monololayer graphene/Al junctions
Externí odkaz:
http://arxiv.org/abs/1601.04552
Autor:
Villechaise, Agnès, Tiberj, Vincent, Tietze, Nikola, Ferrié, Jean-Noël, Galland, Olivier, Muxel, Anne
Publikováno v:
Revue européenne des sciences sociales, 2019 Jan 01. 57(1/2), 255-278.
Externí odkaz:
https://www.jstor.org/stable/45220121
Autor:
Tiberj, Antoine, Rubio-Roy, Miguel, Paillet, Matthieu, Huntzinger, Jean-Roch, Landois, Périne, Mikolasek, Mirko, Contreras, Sylvie, Sauvajol, Jean-Louis, Dujardin, Erik, Zahab, Ahmed-Azmi
The ultimate surface exposure provided by graphene monolayer makes it the ideal sensor platform but also exposes its intrinsic properties to any environmental perturbations. In this work, we demonstrate that the charge carrier density of graphene exf
Externí odkaz:
http://arxiv.org/abs/1304.4418
The buffer layer has been analysed by combined micro-Raman and micro-transmission experiments. The epitaxial graphene growth on the (0001) Si face of 6H-SiC substrates was tuned to get a mixed surface at the early stage of graphitization with i) bare
Externí odkaz:
http://arxiv.org/abs/1212.1196
Autor:
Camara, N., Rius, G., Huntzinger, J-R., Tiberj, A., Mestres, N., Perez-Murano, F., Godignon, P., Camassel, J.
We present an investigation of large, isolated, graphene ribbons grown on the C-face of on-axis semi-insulating 6H-SiC wafers. Using a graphite cap to cover the SiC sample, we modify the desorption of the Si species during the Si sublimation process.
Externí odkaz:
http://arxiv.org/abs/0812.4351