Zobrazeno 1 - 10
of 24
pro vyhledávání: '"A. Theiβ"'
Publikováno v:
Journal of Russian Laser Research. 26:26-32
Fullerenes are a direct link between atoms with discrete electronic energy levels and solids with a band structure and a well-defined surface. In this paper, we report on a quantum mechanical treatment of charge transfer and ionization in the ion-ion
Publikováno v:
Thin Solid Films. 276:231-234
The dependence of the optical properties of p-doped porous silicon layers on the doping level of the substrate is studied systematically. Reflectivity measurements from the far infrared to the ultraviolet as well as Raman and photoluminescence experi
Microstructure and optical properties of plasmapolymer thin films with embedded silver nanoparticles
Publikováno v:
Thin Solid Films. 270:103-108
Plasmapolymer thin films with embedded silver nanoparticles were deposited by simultaneous plasma polymerization and metal evaporation. The particle size and shape were determined by transmission electron microscopy (TEM) and analysed by optical imag
Autor:
R. Arens-Fischer, H. Münder, Hans Lüth, Michael Berger, Markus Thönissen, M. Arntzen, W. Theiβ
Publikováno v:
Thin Solid Films. 255:313-316
We have investigated the optical properties of porosity superlattices and complex multilayer systems. Type II superlattices reveal a more complex layer structure than expected from the substrate doping levels. Type I layer systems have been used to f
Publikováno v:
Thin Solid Films. 255:177-180
Macroscopic “effective” material properties of porous media can be understood as a mixture of the properties of the microscopic constituents in many cases. The relation between macroscopically observable and wanted microscopic quantities depends
Publikováno v:
Thin Solid Films. 255:181-184
Attenuated total reflection spectroscopy is presented as a non-destructive analytical tool to investigate porous silicon layers. It is shown how depth-dependent information on the chemical composition of the layers can be obtained by performing refle
Publikováno v:
Journal of Luminescence. 57:205-209
The influence of the microscopic structure of porous silicon layers on the dielectric function is determined by spectroscopic ellipsometry. The investigated layers were formed on high and low p-type doped substrates. Their microscopic structure was c
Autor:
Manja Krüger, M. G. Berger, Ruediger Arens-Fischer, Hans Lüth, Markus Thönissen, S. Hilbrich, W. Theiβ, S. Billar
Publikováno v:
MRS Proceedings. 452
Recently passive optical devices like filter structures or waveguides based on porous silicon have attracted high interest due to their easy and cheap fabrication. We have formed interference filters using porous silicon by changing the current densi
Autor:
Markus Thönissen, D. Scheyen, Manja Krüger, M. G. Berger, S. Hilbrich, Rüdiger Arens-Fischer, W. Theiβ
Publikováno v:
MRS Proceedings. 452
Porous silicon multilayers are easily produced by a variation of the current density during the electrochemical etching process. The obtained porosity profile in depth is equivalent to a refractive index profile. Preparing appropriate multilayer syst
Autor:
Stephan Frohnhoff, M. Wernke, S. Hilbrich, W. Theiβ, M. Arntzen, Ruediger Arens-Fischer, M. G. Berger
Publikováno v:
MRS Proceedings. 358
Reflectance spectroscopy has been used to obtain the dielectric function of the solid phase of porous silicon. The method is based on a fit of a parameterized dielectric function model to measured spectra. A crucial step in the procedure is the 'diel