Zobrazeno 1 - 10
of 803
pro vyhledávání: '"A. Talneau"'
Publikováno v:
AIP Advances, Vol 10, Iss 4, Pp 045006-045006-8 (2020)
Two experimental implementations of the double-cantilever beam experiment, developed to measure the bonding energy in wafer-bonded semiconductors, are compared for the first time. The comparison is carried out in two material combinations relevant to
Externí odkaz:
https://doaj.org/article/8443cffa75724424ac07cd009d70fbe2
Autor:
Tran, Ngoc-Linh, Malerba, Mario, Talneau, Anne, Biasiol, Giorgio, Ouznali, Oussama, Bousseksou, Adel, Manceau, Jean-Michel, Colombelli, Raffaele
We developed a technique that enables to replace a metallic waveguide cladding with a low-index (n $\sim$ 1.4) material - CaF2 or BaF2 - that in addition is transparent from the mid-IR up to the visible range: elevated confinement is preserved while
Externí odkaz:
http://arxiv.org/abs/1812.06931
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Demonstration of coherent emission from high-$\beta$ photonic crystal nanolasers at room temperature
Autor:
Hostein, Richard, Braive, Remy, Gratiet, Luc Le, Talneau, Anne, Beaudoin, Gregoire, Robert-Philip, Isabelle, Sagnes, Isabelle, Beveratos, Alexios
We report on lasing at room temperature and at telecommunications wavelength from photonic crystal nanocavities based on InAsP/InP quantum dots. Such laser cavities with a small modal volume and high quality factor display a high spontaneous emission
Externí odkaz:
http://arxiv.org/abs/1003.4930
Autor:
Hostein, Richard, Braive, Rémy, Larqué, Matthieu, Lee, Ko-Hsin, Talneau, Anne, Gratiet, Luc Le, Robert-Philip, Isabelle, Sagnes, Isabelle, Beveratos, Alexios
Publikováno v:
Applied Physics Letters (2009) 123101
We report on the control of the spontaneous emission dynamics from InAsP self-assembled quantum dots emitting in the telecommunications C-band and weakly coupled to the mode of a double heterostructure cavity etched on a suspended InP membrane at roo
Externí odkaz:
http://arxiv.org/abs/0903.4354
Autor:
Merabet, A., Texier, M., Tromas, C., Brochard, S., Pizzagalli, L., Thilly, L., Rabier, J., Talneau, A., Le Vaillant, Y.-M., Thomas, O., Godet, J.
Publikováno v:
In Acta Materialia December 2018 161:54-60
Publikováno v:
In Microelectronic Engineering 15 May 2018 192:25-29
Publikováno v:
In Microelectronic Engineering 16 August 2016 162:40-44
Autor:
Konstantinos Pantzas, Ahmad Itawi, Isabelle Sagnes, Gilles Patriarche, Eric Le Bourhis, Anatole Lupu, Henri Benisty, Anne Talneau
Publikováno v:
Photonics, Vol 2, Iss 4, Pp 1054-1064 (2015)
Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si) surfaces and nanostructured ones, using Silicon on Isolator (SOI) or Si substrates. The hybrid interface is characterized electrically and m
Externí odkaz:
https://doaj.org/article/61e84122d22e46e9b28765af9d9e2743
Publikováno v:
In Microelectronic Engineering September 2012 97:154-156