Zobrazeno 1 - 4
of 4
pro vyhledávání: '"A. T. Voroschenko"'
Autor:
V. V. Tetyorkin, A. T. Voroschenko, M. Kravetskii, V. Lashkaryov, V. Vinnichenko, A. Sukach, I. Lucyshyn, A.I. Tkachuk
Publikováno v:
Semiconductor Physics Quantum Electronics and Optoelectronics. 17:325-330
The linearly-graded p-n junctions were prepared by diffusion of cadmium into n-InSb(100) substrate with the electron concentration n 1.610 15 cm -3 at the temperature T = 77 K. Passivation and protection of mesa structures have been carried ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffb3c6db10460d51756a787002109e93
https://doi.org/10.15407/spqeo17.04.325
https://doi.org/10.15407/spqeo17.04.325
Publikováno v:
SPIE Proceedings.
InAs photodiodes were prepared by cadmium diffusion into substrates with n -type conductivity. Formation of compensated region with concentration of free carriers ~10 15 cm -3 is proved from measurements of barrier capacitance and transport mechanism
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7bf337db20510328ee74edaef700d41
https://doi.org/10.1117/12.622195
https://doi.org/10.1117/12.622195
Autor:
Volodymyr I. Lukyanenko, Sergiy V. Stariy, Vladimir V. Tetyorkin, Grygoriy S. Oliynuk, Andriy T. Voroschenko, Andriy V. Sukach
Publikováno v:
Infrared Detector Materials and Devices.
InAs photodiodes were prepared by short-te rm cadmium diffusion into substrates with n-type conductivity. This preparation technique results in formation of p + -p-n-n + diodes with compensated region embedded between two doped regions. Experimental
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6488b1d69b11d484d61b061adcbae204
https://doi.org/10.1117/12.561401
https://doi.org/10.1117/12.561401
Autor:
A. V. Sukach, Vladimir V. Tetyorkin, S. A. Sypko, A. T. Voroschenko, Z. F. Ivasiv, A. V. Lubchenko
Publikováno v:
SPIE Proceedings.
In review articles the methods of preparation as well as basic properties of ohmic contacts metal-semiconductors A 3 B 5 are generalized. Chemical treatment of n-InAs result in pinning of a Fermi level by surface states in a conduction band. Thus, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::550a036cf4f08f2c2ebaa2d0d68dd40b
https://doi.org/10.1117/12.417770
https://doi.org/10.1117/12.417770