Atomic-scale 3D imaging of individual dopant atoms in an oxide semiconductor

Autor: K. A. Hunnestad, C. Hatzoglou, Z. M. Khalid, P. E. Vullum, Z. Yan, E. Bourret, A. T. J. van Helvoort, S. M. Selbach, D. Meier

Publikováno v: Nature Communications, Vol 13, Iss 1, Pp 1-7 (2022)

Small variations in the density of dopants change the physical properties of complex oxides. Here, the authors resolve doping levels in three dimension, imaging the atomic sites that donors occupy in the small band gap semiconductor Er(Mn,Ti)O3.

Externí odkaz: https://doaj.org/article/8dc4d5121b9e4cbda218463281d098c0

Imaging and structure analysis of ferroelectric domains, domain walls, and vortices by scanning electron diffraction

Autor: Ursula Ludacka, Jiali He, Shuyu Qin, Manuel Zahn, Emil Frang Christiansen, Kasper A. Hunnestad, Xinqiao Zhang, Zewu Yan, Edith Bourret, István Kézsmárki, Antonius T. J. van Helvoort, Joshua Agar, Dennis Meier

Publikováno v: npj Computational Materials, Vol 10, Iss 1, Pp 1-8 (2024)

Abstract Direct electron detectors in scanning transmission electron microscopy give unprecedented possibilities for structure analysis at the nanoscale. In electronic and quantum materials, this new capability gives access to, for example, emergent

Externí odkaz: https://doaj.org/article/ea601bb91cab4511a8ea8e12e2d58b04

Moiré fringes in conductive atomic force microscopy

Autor: L. Richarz, J. He, U. Ludacka, E. Bourret, Z. Yan, A. T. J. van Helvoort, D. Meier

Publikováno v: Applied Physics Letters, 122 (16)

Moiré physics plays an important role in characterization of functional materials and engineering of physical properties in general, ranging from strain-driven transport phenomena to superconductivity. Here, we report on the observation of moiré fr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9b9389a313821f7e0920770e2ba5df2f
https://hdl.handle.net/20.500.11850/612673

Intrinsic Stress Analysis on Free Standing Ultrathin Membrane Structures Through Release of Microcantilevers

Autor: Stephanie Birgit Burgmann, Markus Joakim Lid, Håkon J. D. Johnsen, Nils Petter Vedvik, Bjørn Haugen, J Provine, Antonius T. J. van Helvoort, Jan Torgensen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d4600a9a012c4f3a9206d8dfe4b00670
https://doi.org/10.2139/ssrn.4365894

Application of a long short-term memory for deconvoluting conductance contributions at charged ferroelectric domain walls

Autor: Didrik Rene Småbråten, Sverre Magnus Selbach, Trygve Magnus Ræder, Stephan Krohns, Joshua C. Agar, Donald M. Evans, Dennis Meier, Edith Bourret, Antonius T. J. van Helvoort, Theodor S. Holstad, Jakob Schaab, Tor Grande, Zewu Yan

Publikováno v: npj Computational Materials, Vol 6, Iss 1, Pp 1-7 (2020)
npj Computational Materials, 6 (1)
npj Computational Materials
npj Computational Materials, vol 6, iss 1

Ferroelectric domain walls are promising quasi-2D structures that can be leveraged for miniaturization of electronics components and new mechanisms to control electronic signals at the nanoscale. Despite the significant progress in experiment and the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76d0c8928e470b1b1d533dede707132e
http://link.springer.com/article/10.1038/s41524-020-00426-z