Výsledky vyhledávání - "A. T. Budnikov"

Structure and element composition of the nitride layer of AlN/Al2O3 templates obtained by the thermochemical nitridation of sapphire

Autor: M. V. Dobrotvorska, Pavel V. Mateychenko, S. V. Nizhankovsky, A. T. Budnikov, S. I. Krivonogov, E. A. Vovk, V. F. Tkachenko

Publikováno v: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 9:1178-1183

Aluminum-nitride layers on sapphire (AlN/sapphire templates) are obtained by the thermochemical nitridation (TCN) of sapphire substrates. According to X-ray diffraction data, AlN layers have a singlecomponent texture with the axis [0001] and high str

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::47cc19ce0df759cc373935d48d0620b0
https://doi.org/10.1134/s1027451015060221

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Specific features of the surface morphology of modified AlN/sapphire substrates fabricated by thermochemical nitridation

Autor: N. S. Sidelnikova, E. A. Vovk, S. V. Nizhankovskyi, A. E. Muslimov, A. T. Budnikov, S. I. Kryvonogov, A. A. Krukhmalev, G. T. Adonkin

Publikováno v: Crystallography Reports. 60:138-142

The influence of the reducing annealing of sapphire substrate during the thermochemical nitrida� tion of sapphire on the structure of the nitride layer in the AlN/sapphire template has been investigated. Iso� thermal annealings of (0001) and sapp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2ec5328df8f6008d96069990804f6abe
https://doi.org/10.1134/s1063774515010125

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Effect of deviations from the (0001) plane of sapphire on the surface properties

Autor: A. T. Budnikov, L. A. Lytvynov

Publikováno v: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 10:153-155

The stability of the physicochemical properties of the (0001) plane of sapphire is largely determined by the accuracy of its orientation. It is shown that at a deviation of the surface from the (0001) plane by 4°, the wear rate increases by 13–22%

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9443484e16f733b5ff01f755d9f81faa
https://doi.org/10.1134/s1027451016010158

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Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization

Autor: G. T. Adonkin, N. S. Sidelnikova, L. A. Grin, V. V. Baranov, A. T. Budnikov

Publikováno v: Functional Materials. 20:111-117

The coefficient of dislocation gliding over the planes of easy glide depending on the shape of the crystallization front, is determined. The regions of non-uniform distribution of thermal field in the crystal are established. Optimized are the temper

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7c61df6108fdd633fb964eb0d14199e
https://doi.org/10.15407/fm20.01.111

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Influence of nitrogen-containing reducing media on the optical and luminescence characteristics of sapphire

Autor: A. Ja. Dan’ko, A. T. Budnikov, G. T. Adonkin, N. S. Sidelnikova, Kh. Sh.-ogly Kaltaev, A. N. Shehovtzov, S. V. Nizgankovsky

Publikováno v: Crystallography Reports. 57:912-919

The optical and luminescence characteristics of sapphire crystals grown in nitrogen-containing reducing media based on CO have been investigated. It is shown that the nitrogen dissolution in the oxygen sublattice of sapphire under reducing conditions

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2eb08e3947f021d8ab9886efd62f32bd
https://doi.org/10.1134/s1063774512070097

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Optical homogeneity of Ti:Sapphire crystals grown by horizontal directional solidification

Autor: V. V. Baranov, G. T. Adonkin, S. V. Nizhankovskiy, A. T. Budnikov, E. V. Krivonosov, V. N. Kanishchev, L. A. Grin

Publikováno v: Inorganic Materials. 48:1111-1114

We have found conditions for the growth of Ti:sapphire crystals with a uniform dopant profile by horizontal directional solidification (HDS) in protective gaseous atmospheres of different compositions at different pressures. The results demonstrate t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9a601136ccc371b044ab34cbe1400913
https://doi.org/10.1134/s0020168512110088

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Thermochemical nitridation of sapphire substrates of different crystallographic orientations

Autor: A. T. Budnikov, N. S. Sidelnikova, S. I. Krivonogov, G. T. Adonkin, H. Sh.-ogly Kaltaev, S. V. Nizhankovskiy, M. V. Dobrotvorskaya, E. A. Vovk, V. F. Tkachenko, A. A. Krukhmalev

Publikováno v: Physics of the Solid State. 54:1896-1902

This paper presents the results of the study of the influence of physicochemical parameters of thermochemical nitridation of sapphire substrates of different crystallographic orientations in an N2 + (CO,H2) reducing atmosphere on structural character

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::07149ff2d9fc31bf147fbdd969199d45
https://doi.org/10.1134/s1063783412090211

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Mechanism of the interaction between Al2O3 and SiO2 during the chemical-mechanical polishing of sapphire with silicon dioxide

Autor: E. A. Vovk, A. T. Budnikov, A. Ya. Dan’ko, M. V. Dobrotvorskaya, S. I. Krivonogov

Publikováno v: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 6:115-121

Chemical-mechanical polishing of sapphire with colloidal silicon dioxide has been studied with X-ray photoelectron spectroscopy. It has been found that aluminum silicate with the composition Al2SiO5 is formed on the polished crystal surface. The sili

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ebd272687f2ac2c98e70b4b3d6c4b032
https://doi.org/10.1134/s1027451012020188

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