Zobrazeno 1 - 10
of 95
pro vyhledávání: '"A. Sybous"'
Autor:
Narjis, A., El kaaouachi, A., Biskupski, G., Daoudi, E., Limouny, L., Dlimi, S., Errai, M., Sybous, A.
Publikováno v:
In Materials Science in Semiconductor Processing October 2013 16(5):1257-1261
Publikováno v:
In Journal of Physics and Chemistry of Solids October 2013 74(10):1349-1354
Autor:
Narjis, A., El kaaouachi, A., Dlimi, S., Biskupski, G., Daoudi, E., Errai, M., Sybous, A., Limouny, L.
Publikováno v:
In Physica B: Physics of Condensed Matter 15 June 2013 419:7-10
Autor:
Narjis, A., kaaouachi, A. El, Limouny, L., Dlimi, S., Errai, M., Sybous, A., Kumaresavanji, M.
Publikováno v:
In Journal of Magnetism and Magnetic Materials April 2013 332:6-9
Publikováno v:
Journal of Physics and Chemistry of Solids. 74:1349-1354
We investigated the temperature dependence of resistivity of a high mobility two-dimensional holes system grown on the (311) GaAs surface in the absence of the magnetic field near the metal–insulator transition. The Coulomb hopping was found in a w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4308f17968b5d29afb7fb1f06ac6dfff
https://doi.org/10.1016/j.jpcs.2013.05.004
https://doi.org/10.1016/j.jpcs.2013.05.004
Autor:
A. Sybous, A. Narjis, S. Dlimi, G. Biskupski, M. Errai, E. Daoudi, A. El kaaouachi, L. Limouny
Publikováno v:
Materials Science in Semiconductor Processing. 16:1257-1261
Electrical transport properties of La0.67Sr0.33MnO3 polycrystalline thin films are studied in the temperature range 13−300 K and in magnetic fields up to 3 kOe. It is found that the resistivity of the sample with ellipsoidal grains exhibits an insu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83397bd3eefc346bd891f4f0ffb246cd
https://doi.org/10.1016/j.mssp.2013.01.004
https://doi.org/10.1016/j.mssp.2013.01.004
Autor:
G. Biskupski, M. Errai, S. Dlimi, A. El kaaouachi, L. Limouny, A. Narjis, E. Daoudi, A. Sybous
Publikováno v:
Physica B: Condensed Matter. 419:7-10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f80cd2a7628dba66eec181c8157ede83
https://doi.org/10.1016/j.physb.2013.03.009
https://doi.org/10.1016/j.physb.2013.03.009
Autor:
Jamal Hemine, A. Narjis, Abdelhamid El Kaaouachi, S. Dlimi, Gerard Buskipski, L. Limouny, R. Abdia, A. Sybous
Publikováno v:
Journal of Modern Physics. :447-450
We present results of an experimental study of magnetoresistance phenomenon in an amorphous silicon-nickel alloys a-Si1-yNiy:H:H (where y = 0.23) on the insulating side of the metal-insulator transition (MIT) in presence of magnetic field up to 4.5 T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22ac753ceb690382e4f97c404a20b9f6
https://doi.org/10.4236/jmp.2012.36061
https://doi.org/10.4236/jmp.2012.36061
Autor:
A. Narjis, S. Dlimi, Jamal Hemine, Abdelhamid El Kaaouachi, R. Abdia, Gerard Biskupski, L. Limouny, A. Sybous
Publikováno v:
Journal of Modern Physics. :521-528
We present results of an experimental study of magnetoresistance (MR) in insulating NbSi amorphous alloys sample showing Variable Range Hopping (VRH) conductivity. The MR is found to be negative in a wide range of low temperature (4.2-20 K) and in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12119b62474fdc5a182723b6babfc640
https://doi.org/10.4236/jmp.2012.37071
https://doi.org/10.4236/jmp.2012.37071
Autor:
Jamal Hemine, A. Sybous, Gerard Biskupski, Abdessadek Aboudihab, A. Narjis, S. Dlimi, L. Limouny, R. Abdia, Abdelhamid El Kaaouachi
Publikováno v:
Journal of Modern Physics. :517-520
On the insulating side of the metal-insulator transition (MIT), the study of the effect of low Temperatures T on the electrical transport in amorphous silicon-nickel alloys a-Si1-yNiy:H exhibits that the electrical conductivity follows, at the beginn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7034c1db6e9d43728581b780e256adb8
https://doi.org/10.4236/jmp.2012.37070
https://doi.org/10.4236/jmp.2012.37070