Zobrazeno 1 - 10
of 44
pro vyhledávání: '"A. Suvkhanov"'
Autor:
Vispute, R. D., Narayan, J., Dovidenko, K., Jagannadham, K., Parikh, N., Suvkhanov, A., Budai, J. D.
Publikováno v:
Journal of Applied Physics; 12/15/1996, Vol. 80 Issue 12, p6720, 5p, 1 Black and White Photograph, 1 Diagram, 1 Chart, 5 Graphs
Autor:
Robert F. Davis, I.O. Usov, Thomas Gehrke, L.Ya. Krasnobaev, S. P. Withrow, Darren B. Thomson, Nalin R. Parikh, John D. Hunn, A. Suvkhanov
Publikováno v:
Materials Science Forum. :1615-1618
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e68d18345aaea724bfcbe37cba7930d9
https://doi.org/10.4028/www.scientific.net/msf.338-342.1615
https://doi.org/10.4028/www.scientific.net/msf.338-342.1615
Autor:
Robert F. Davis, Mike Lioubtchenko, David Bray, Nalin R. Parikh, John D. Hunn, Eric Carlson, Agajan Suvkhanov, Michael D. Bremser
Publikováno v:
Scopus-Elsevier
Single-crystal GaN films grown on AlN buffer layers previously deposited on 6H-SiC(0001) were studied for radiation damage and its recovery using Rutherford backscattering/channeling, photoluminescence, and cross-sectional TEM. The highest fluence of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12b9e5c65be318ab604b5c0d8c17b645
https://doi.org/10.1016/s0168-583x(97)00076-1
https://doi.org/10.1016/s0168-583x(97)00076-1
Autor:
A. Suvkhanov, K. Jagannadham, Katharine Dovidenko, John D. Budai, R. D. Vispute, Jagdish Narayan, Nalin R. Parikh
Publikováno v:
Journal of Applied Physics. 80:6720-6724
High‐quality ceramics based heteroepitaxial structures of oxide‐nitride‐semiconductors, i.e., SrTiO3/TiN/Si(100) have been fabricated by in situ pulsed laser deposition. The dependence of substrate temperature and oxygen partial pressure on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::525ce658acd3ce4a06c6b93257596c04
https://doi.org/10.1063/1.363798
https://doi.org/10.1063/1.363798
Publikováno v:
Ferroelectrics. 124:189-194
With TGSe crystal as an example the y-irradiation effects upon the ferroelectric phase transition including dose dependence of Landau expansion coefficients are considered and the interpretation of the results is given.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::625dd5771005125b82637eef7c5c5ff5
https://doi.org/10.1080/00150199108209436
https://doi.org/10.1080/00150199108209436
Publikováno v:
Physica Status Solidi (a). 128:K53-K56
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6001d9ae42af6603a87e0199ac7e7504
https://doi.org/10.1002/pssa.2211280140
https://doi.org/10.1002/pssa.2211280140
Autor:
C. A. Parker, V. A. Joshkin, Jerome J. Cuomo, Robert F. Davis, L. Y. Krasnobaev, Salah M. Bedair, A. Suvkhanov
Publikováno v:
Applied Physics Letters. 72:2838-2840
The effect of He ion implantation on the optical properties of epitaxial GaN-on-SiC was studied. We observed that He+ irradiation increases the relative intensity of the “blue emission” and resistivity of GaN films and decreases the intensity of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b310f9930e38e10f5457fbe35ef39daa
https://doi.org/10.1063/1.121474
https://doi.org/10.1063/1.121474
Autor:
Miguel A. Vilchis, Anthony M. Phan, Agajan Suvkhanov, Kenneth A. LaBel, Mohammad R. Mirabedini, Hak Kim, Jun Song, T.L. Irwin, Jeffrey Tung, R. Saigusa, Christina Seidleck, Rick Finlinson, J.D. Forney, Verne Hornback, C. Poivey, Melanie D. Berg
Publikováno v:
2006 IEEE Radiation Effects Data Workshop.
The authors present radiation data, total ionizing dose and single event effects, on the LSI logic 0.11 μm commercial process and two modified versions of this process. Modified versions include a buried layer to guarantee single event latch up immu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08cbbf8e432404260f870a3f98c19d3f
https://doi.org/10.1109/redw.2006.295484
https://doi.org/10.1109/redw.2006.295484
Autor:
K. Jagannadham, Ramki Kalyanaraman, John D. Budai, Katharine Dovidenko, Jagdish Narayan, Serge Oktyabrsky, Nalin R. Parikh, R. D. Vispute, A. Suvkhanov
Publikováno v:
Applied Physics Letters. 71:1709-1711
We have systematically investigated the effect of oxygen partial pressure (PO2) on the crystalline quality of SrTiO3 films grown on MgO (001) substrates using pulsed laser deposition and established optimized conditions for the growth of high-quality
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ce54e7d4bf7e4aacbc1457712968252
https://doi.org/10.1063/1.120011
https://doi.org/10.1063/1.120011
Publikováno v:
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.
SRP, SIMS and C-V measurements of implanted Si wafers were carried out in this study to examine the effect of annealing conditions on the activation of acceptors. Shorter RTP annealing at relatively low temperatures provided higher Indium activation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9aef12955ce3623d06631b5267393b7
https://doi.org/10.1109/iit.2002.1257930
https://doi.org/10.1109/iit.2002.1257930