Zobrazeno 1 - 10
of 448
pro vyhledávání: '"A. Staton-Bevan"'
Autor:
K. W. Benz
Publikováno v:
Crystal Research and Technology. 31:896-896
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cf8b06087d5bda9df1f26ac64b2bf1e
https://doi.org/10.1002/crat.2170310715
https://doi.org/10.1002/crat.2170310715
Autor:
Toby Staton-Bevan, Charles A. Clarke
Publikováno v:
CyberSA
Open data can be defined as data that is freely distributed, used and shared by anyone. Encouragement and promotion of open data sets, is a strategic aim of Governments across the world. Subsequently, both public and private organisations are publish
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c13471ed0ef8b8da2fad882dd5759410
https://doi.org/10.1109/cybersa52016.2021.9478243
https://doi.org/10.1109/cybersa52016.2021.9478243
Autor:
Xiaomei Zhang, Anne E Staton-Bevan
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da3a3644eecb380f7c61f58d9a6f5c9b
https://doi.org/10.1201/9781003069621-49
https://doi.org/10.1201/9781003069621-49
Publikováno v:
Journal of Applied Physics; 11/15/1997, Vol. 82 Issue 10, p4870, 7p, 8 Black and White Photographs, 1 Diagram, 4 Charts
Autor:
Zhang, X., Staton-Bevan, A. E., Pashley, D. W., Parker, S. D., Droopad, R., Williams, R. L., Newman, R. C.
Publikováno v:
Journal of Applied Physics; 1/15/1990, Vol. 67 Issue 2, p800, 7p
Publikováno v:
Materials and Manufacturing Processes. 16:127-140
The effects of Hf and Co alloying additions on the mechanical properties of Ni3Al in the temperature range −197°C–1000°C, and on the hot cyclic oxidation resistance of this alloy are presented. Shown also are the effects of Al and Hf-containing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4e4364bb58c8dab7371bd998ea6a0ca
https://doi.org/10.1081/amp-100103702
https://doi.org/10.1081/amp-100103702
Autor:
A. E. Staton-Bevan, Won Jae Lee
Publikováno v:
Metals and Materials. 5:231-235
Transmission electron microscopy has been employed to investigate dislocation configurations and interactions m Si1-xGex/Si(001) epilayer heterostructures grown by Gas-Source MBE Thick Si1-xGex/Si(001) epilayers had 3-dimensional configuration of mis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca98a17eb86860c670ccf8e08301280b
https://doi.org/10.1007/bf03026072
https://doi.org/10.1007/bf03026072
Autor:
Won Jae Lee, A. E. Staton-Bevan
Publikováno v:
Metals and Materials. 4:1001-1005
Single Si1-xGex epilayer on Si buffer layer (~100 nm) was grown by gas source molecular beam epitaxy (GS-MBE) at 640°C. Samples were investigated by transmission electron microscopy. For all the samples investigated, the misfit dislocations were irr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec37121f71461363d0b7c73636d370b1
https://doi.org/10.1007/bf03025968
https://doi.org/10.1007/bf03025968
Autor:
Won Jae Lee, A. E. Staton-Bevan
Publikováno v:
Metals and Materials. 4:1007-1012
The degree of strain relaxation via a formation of misfit dislocation has been calculated in single Si1-xGex/Si (001) epilayers grown at 640°C, by gas-source molecular beam epitaxy. The scale of strain relief via misfit dislocation was below 22% for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbb67d4dca5c099eb180ffae04f96e3a
https://doi.org/10.1007/bf03025969
https://doi.org/10.1007/bf03025969
Publikováno v:
Journal of Applied Physics. 82:4870-4876
Transmission electron microscopy (TEM) has been used to investigate the mechanisms of misfit strain relaxation in InxGa1−xAs epilayers grown on GaAs(111¯)B substrates misoriented 2° towards [211¯]. It was found that the relaxation was brought ab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be27c78049c0cfdc37d18f0012107b12
https://doi.org/10.1063/1.366349
https://doi.org/10.1063/1.366349