Zobrazeno 1 - 10
of 633
pro vyhledávání: '"A. Siol"'
Autor:
Pshyk, O. V., Zhuk, S., Patidar, J., Wieczorek, A., Sharma, A., Michler, J., Cancellieri, C., Stevanovic, V., Siol, S.
Amorphous materials offer unique functional characteristics, which are often not observed in their crystalline counterparts. This makes them invaluable for many technological applications, such as diffusion barriers in semiconductor devices. However,
Externí odkaz:
http://arxiv.org/abs/2412.01009
Ionized physical vapor deposition techniques, such as high-power impulse magnetron sputtering (HiPIMS) are gaining popularity due to their ability to produce high-quality thin films at low deposition temperatures. In those techniques, ions are common
Externí odkaz:
http://arxiv.org/abs/2408.12174
Autor:
Thorwarth, K., Watroba, M., Pshyk, O., Zhuk, S., Patidar, J., Schwiedrzik, J., Sommerhäuser, J., Sommerhäuser, L., Siol, S.
Ternary transition metal nitride coatings are promising for many applications as they can offer improved hardness and oxidation resistance compared to binary counterparts. A common challenge in the deposition of functional nitride thin films is oxyge
Externí odkaz:
http://arxiv.org/abs/2405.07789
Autor:
Patidar, Jyotish, Thorwarth, Kerstin, Schmitz-Kempen, Thorsten, Kessels, Roland, Siol, Sebastian
Fueled by the 5G revolution, the demand for advanced radio frequency micro-electromechanical systems (MEMS) based on AlScN is growing rapidly. However, synthesizing high-quality, textured AlScN thin films is challenging. Current approaches typically
Externí odkaz:
http://arxiv.org/abs/2405.00210
The crystalline quality and degree of c-axis orientation of hexagonal AlN thin films correlate directly with their functional properties. Therefore, achieving AlN thin films of high crystalline quality and texture is of extraordinary importance for m
Externí odkaz:
http://arxiv.org/abs/2403.10385
Autor:
Wieczorek, Alexander, Kuba, Austin G., Sommerhäuser, Jan, Caceres, Luis Nicklaus, Wolff, Christian, Siol, Sebastian
To optimize materials' stability, automated high-throughput workflows are of increasing interest. However, many of those workflows use processes not suitable for large-area depositions which limits the transferability of results. While combinatorial
Externí odkaz:
http://arxiv.org/abs/2311.14497
Autor:
Zhuk, Siarhei, Wieczorek, Alexander, Sharma, Amit, Patidar, Jyotish, Thorwarth, Kerstin, Michler, Johann, Siol, Sebastian
Publikováno v:
Chemistry of Materials, 2023, 35, 17, 7069-7078
The discovery of new functional materials is one of the key challenges in materials science. Combinatorial high-throughput approaches using reactive sputtering are commonly employed to screen unexplored phase spaces. During reactive combinatorial dep
Externí odkaz:
http://arxiv.org/abs/2305.19875
Autor:
Jaspers, Susanna, Bauer, Lena, Hempel, Linn, Achenbach, Juliane, Bosch, Josefin, Ludwig, Christiane, Schwardt, Miriam, Reufsteck, Benjamin, Siol, Anna, Steglich, Jonas, Stoevesandt, Dietrich
Publikováno v:
GMS Journal for Medical Education, Vol 41, Iss 5, p Doc59 (2024)
Objective: The Halle continuum (HaKom) is a course for doctors undergoing postgraduate medical training in southern Saxony-Anhalt. It revises the skills and knowledge acquired during undergraduate medical training and develops them on an individual a
Externí odkaz:
https://doaj.org/article/cc998264aaab4f3a8471f1aa729be8b0
Autor:
Patidar, Jyotish, Sharma, Amit, Zhuk, Siarhei, Lorenzin, Giacomo, Cancellieri, Claudia, Sarott, Martin F., Trassin, Morgan, Thorwarth, Kerstin, Michler, Johann, Siol, Sebastian
Many technologies require highly-oriented and textured functional thin films. The most common synthe-sis approaches use on-axis sputter geometries. However, in some scenarios, on-axis sputtering is not feasible. During ionized physical vapor depositi
Externí odkaz:
http://arxiv.org/abs/2301.11183
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 25, Pp n/a-n/a (2024)
Abstract The crystalline quality and degree of c‐axis orientation of hexagonal AlN thin films correlate directly with their functional properties. Therefore, achieving AlN thin films of high crystalline quality and texture is of extraordinary impor
Externí odkaz:
https://doaj.org/article/01d9648e86ef47c1afdb3f6639e53c69