Zobrazeno 1 - 10
of 59
pro vyhledávání: '"A. Shkurmanov"'
Autor:
A. Shkurmanov
Publikováno v:
Vìsnik Harkìvsʹkogo nacìonalʹnogo unìversitetu ìmenì V.N. Karazìna. Serìâ: fìzika., Iss 28 (2018)
Externí odkaz:
https://doaj.org/article/a9e06cd435764440b33b9507a3b7a296
Autor:
Sardhara, Trushal, Shkurmanov, Alexander, Li, Yong, Shi, Shan, Cyron, Christian J., Aydin, Roland C., Ritter, Martin
Publikováno v:
In Ultramicroscopy February 2024 256
Autor:
Sardhara, Trushal1, Shkurmanov, Alexander2, Li, Yong3, Riedel, Lukas4, Shi, Shan4,5, Cyron, Christian J.1,6, Aydin, Roland C.1,6, Ritter, Martin2 ritter@tuhh.de
Publikováno v:
Nanomanufacturing & Metrology. 2/27/2024, Vol. 7 Issue 1, p1-13. 13p.
Autor:
Shkurmanov, Alexander1 (AUTHOR) alexander.shkurmanov@tuhh.de, Krekeler, Tobias1 (AUTHOR), Ritter, Martin1 (AUTHOR)
Publikováno v:
Nanomanufacturing & Metrology. Jun2022, Vol. 5 Issue 2, p112-118. 7p.
Publikováno v:
In Procedia Engineering 2016 168:1156-1159
Autor:
Shkurmanov, Alexander, Sturm, Chris, Lenzner, Jörg, Feuillet, Guy, Tendille, Florian, De Mierry, Philippe, Grundmann, Marius
Publikováno v:
AIP Advances 6, 095013 (2016); doi: 10.1063/1.4963076
We report the possibility to control the tilting of nanoneedles and nanowires by using structured sapphire substrates. The advantage of the reported strategy is to obtain well oriented growth along a single direction tilted with respect to the surfac
Externí odkaz:
https://ul.qucosa.de/id/qucosa%3A14959
https://ul.qucosa.de/api/qucosa%3A14959/attachment/ATT-0/
https://ul.qucosa.de/api/qucosa%3A14959/attachment/ATT-0/
Autor:
Jin Hee Bae, Ioan Costina, Dong Yang, Andreas Mai, Jean-Michel Hartmann, Qing-Tai Zhao, Florian Baerwolf, Viktoria Schlykow, Mingshan Liu, Detlev Grützmacher, Zoran Ikonic, Joachim Knoch, Alexander Shkurmanov, Dan Buca
Publikováno v:
ACS Applied Nano Materials. 4:94-101
Harvesting the full potential of single-crystal semiconductor nanowires (NWs) for advanced nanoscale field-effect transistors (FETs) requires a smart combination of charge control architecture and functional semiconductors. In this article, high-perf
Autor:
Liu, M, Yang, D, Shkurmanov, A, Bae, JH, Schlykow, V, Hartmann, J-M, Ikonic, Z, Baerwolf, F, Costina, I, Mai, A, Knoch, J, Grützmacher, D, Buca, D, Zhao, Q-T
Harvesting the full potential of single-crystal semiconductor nanowires (NWs) for advanced nanoscale field-effect transistors (FETs) requires a smart combination of charge control architecture and functional semiconductors. In this article, high-perf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::9f1f77ea51da4e9201c6e23fb5ce439d
https://eprints.whiterose.ac.uk/169331/1/ACS_ApplNanoMat.pdf
https://eprints.whiterose.ac.uk/169331/1/ACS_ApplNanoMat.pdf
Autor:
Beale, Christopher, Hamacher, Stefanie, Yakushenko, Alexey, Bensaid, Oumaima, Willbold, Sabine, Beltramo, Guillermo, Möller, Sören, Hartmann, Heinrich, Neumann, Elmar, Mussler, Gregor, Shkurmanov, Alexander, Mayer, Dirk, Wolfrum, Bernhard, Offenhäusser, Andreas
Publikováno v:
RSC Advances 10(53), 32102-32102 (2020). doi:10.1039/D0RA90092C
RSC Advances 10(53), 32102-32102 (2020). doi:10.1039/D0RA90092C
Published by RSC Publishing, London
Published by RSC Publishing, London
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::176a2d79e0267f6ffcf636a39bc8e752
Autor:
Beale, Christopher, Hamacher, Stefanie, Yakushenko, Alexey, Bensaid, Oumaima, Willbold, Sabine, Beltramo, Guillermo, Möller, Sören, Hartmann, Heinrich, Neumann, Elmar, Mussler, Gregor, Shkurmanov, Alexander, Mayer, Dirk, Wolfrum, Bernhard, Offenhäusser, Andreas
Publikováno v:
RSC Advances 10(23), 13737-13748 (2020). doi:10.1039/D0RA02558E
RSC Advances 10(23), 13737-13748 (2020). doi:10.1039/D0RA02558E
Published by RSC Publishing, London
Published by RSC Publishing, London
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d821358a75e06554fc76066f75c9a0ac