Zobrazeno 1 - 10
of 337
pro vyhledávání: '"A. Shkrebtii"'
Since the photoconversion efficiency $\eta$ of the silicon-based solar cells (SCs) under laboratory conditions is approaching the theoretical fundamental limit, further improvement of their performance requires theoretical modeling and/or numerical s
Externí odkaz:
http://arxiv.org/abs/2409.01101
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 23, Iss 1, Pp 66-70 (2020)
Structural and electronic characteristics of metal vacancies in nanocrystals Cd1–xZnxS have been studied within the density functional method. The electron state density and vacancy formation energy have been calculated, and an analysis of structur
Externí odkaz:
https://doaj.org/article/dc12493d1ba5416f8f9557d06e7b78ef
Autor:
Cho, Yujin, Anderson, Sean M., Mendoza, Bernardo S., Okano, Shun, Carriles, Ramon, Arzate, N., Shkrebtii, Anatoli I., Wu, Di, Lai, Keji, Zahn, D. R. T., Downer, M. C.
In this work, we report linear and non-linear spectroscopic measurements of chemically-grown layered (from one to 37 quintuple layers) and bulk alpha-In2Se3 samples over a photon energy range of 1.0--4 eV, and compare with ab initio density functiona
Externí odkaz:
http://arxiv.org/abs/1911.01784
Publikováno v:
Phys. Rev. B 96, 195415 (2017)
We present a theoretical study of spin-velocity injection (SVI) of a pure spin current (PSC) induced by a linearly polarized light that impinges normally on the surface of two 50\% hydrogenated noncentrosymmetric two-dimensional (2D) graphene structu
Externí odkaz:
http://arxiv.org/abs/1709.02282
Publikováno v:
Phys. Rev. B 97, 125304 (2018)
We have studied the structural, electronic and magnetic properties of spinel $\rm Co_3O_4$(111) surfaces and their interfaces with ZnO (0001) using density functional theory (DFT) within the Generalized Gradient Approximation with on-site Coulomb rep
Externí odkaz:
http://arxiv.org/abs/1704.07148
Autor:
Sachenko, A. V., Shkrebtii, A. I., Korkishko, R. M., Kostylyov, V. P., Kulish, N. R., Sokolovskyi, I. O.
The selfconsistent model for the temperature dependence of photoconversion efficiency $\eta$ for highly efficient silicon solar cells (SCs) is developed. It is demonstrated that effect of the efficiency decrease due to increasing temperature is less
Externí odkaz:
http://arxiv.org/abs/1504.04210
Autor:
Sachenko, A. V., Shkrebtii, A. I., Korkishko, R. M., Kostylyov, V. P., Kulish, N. P., Sokolovskiy, I. O., Evstigneev, M.
Conversion of energy of beta-particles into electric energy in a p-n junction based on direct-bandgap semiconductors, such as GaAs, considering realistic semiconductor system parameters is analyzed. An expression for the collection coefficient, $Q$,
Externí odkaz:
http://arxiv.org/abs/1504.03179
Publikováno v:
Слобожанський науково-спортивний вісник, Iss 2(82), Pp 11-16 (2021)
Purpose: to determine the individual parameters of the training work modes on the rowing ergometer for the development of specific components of the functional support of athletes in sports with the manifestation of endurance. Material and methods: t
Externí odkaz:
https://doaj.org/article/2dc3738e5be24daf8ed532f1a1bba27e
Autor:
Sachenko, A. V., Shkrebtii, A. I., Korkishko, R. M., Kostylyov, V. P., Kulish, M. R., Sokolovskyi, I. O.
The conversion of energy of electrons produced by a radioactive source into electricity in a Si and SiC $\textit{p-n}$ junctions is modeled. The features of the generation function describing the electron-hole pair production by an electron flow and
Externí odkaz:
http://arxiv.org/abs/1412.7826
Hydrogen, introduced into crystalline (c-) or amorphous (a-) silicon (Si), plays an important role in improving Si properties for photovoltaics application. Low temperature proton implantation in c-Si and a-Si or H-doping of Si films introduces metas
Externí odkaz:
http://arxiv.org/abs/1406.0562