Zobrazeno 1 - 8
of 8
pro vyhledávání: '"A. Sh. Razzakov"'
Publikováno v:
International Journal of Modern Physics B. 37
In this work, the physical features of growing epitaxial layers of new solid solutions of (GaAs)[Formula: see text](Ge[Formula: see text](ZnSe)[Formula: see text] from the liquid phase of the tin solution-melt on GaAs (100) substrates were investigat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::866dfbeed559198718868b8ce905506b
https://doi.org/10.1142/s0217979223501321
https://doi.org/10.1142/s0217979223501321
Publikováno v:
Materials Chemistry and Physics. 68:1-6
Epitaxial layers of (Ge 2 ) 1− x (ZnSe) x solid solutions from solution-melt, limited by horizontal GaAs and Ge substrates have been grown. The dependence of lattice perfection on growth conditions is shown. X-ray fluorescence spectrum, diffraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d3162dfb0873328d1ce8627e626f36c
https://doi.org/10.1016/s0254-0584(00)00230-3
https://doi.org/10.1016/s0254-0584(00)00230-3
Autor:
A. Sh. Razzakov
Publikováno v:
Doklady Physics. 46:548-550
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b6409755a5864194984123b369bbeb5
https://doi.org/10.1134/1.1401219
https://doi.org/10.1134/1.1401219
Publikováno v:
Technical Physics Letters. 27:698-700
Epitaxial layers of Ge1−xSnx semiconductor solid solutions on germanium substrates were grown from a limited volume of a tin-based solution melt in a temperature interval from 740 to 450°C. Optimum conditions favoring the growth of crystallographi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::310df9be0bf61c494d2cd8939458280b
https://doi.org/10.1134/1.1398973
https://doi.org/10.1134/1.1398973
Publikováno v:
Technical Physics Letters. 28:927-928
Epitaxial layers of (Sn2)1−x (InSb)x solid solutions were grown from an indium-based solution melt confined between two horizontal GaAs substrates in a temperature interval from 325 to 200°C. Scanning microprobe and X-ray diffraction investigation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ba708f13cc227cd20981b7f19066fd7
https://doi.org/10.1134/1.1526886
https://doi.org/10.1134/1.1526886
Publikováno v:
Technical Physics Letters. 27:973-974
Epitaxial layers of (GaAs)1−x(ZnSe)x solid solutions were grown from a tin-based solution melt confined between GaAs substrates. The solid solution layers were characterized with respect to composition, homogeneity, and some physical characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08f2e3e287fcdd86b9d927d5d1ed3830
https://doi.org/10.1134/1.1424410
https://doi.org/10.1134/1.1424410
Publikováno v:
Technical Physics Letters. 25:986-987
Structures comprising Si-Si1−x Gex-(Ge2)1−x (InP)x with an intermediate Si1−x Gex buffer layer were grown on silicon substrates. Morphological examinations, scanning patterns and diffraction spectra, and also the electrophysical and luminescenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b44d02984fdb9cca50497b8041352c76
https://doi.org/10.1134/1.1262702
https://doi.org/10.1134/1.1262702
Publikováno v:
Technical Physics Letters. 24:47-48
Based on morphological investigations, as well as on a study of the scanning patterns and diffraction spectra of the heterostructures GaAs-(Ge2)1−x(ZnSe)x, Ge-(Ge2)1−x(ZnSe)x, GaP-(Ge2)1−x(ZnSe)x, and Si-(Ge2)1−x(ZnSe)x, it is shown that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9971086d2fe41f170c30f689211537f
https://doi.org/10.1134/1.1261988
https://doi.org/10.1134/1.1261988