Zobrazeno 1 - 10
of 21
pro vyhledávání: '"A. Sesselego"'
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 21 August 2003 509(1-3):92-95
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 2002 487(1):170-174
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 509:92-95
Previous results on the performance under irradiation of a pixel detector matrix (Nucl. Instr. and Meth. A 487 (2002) 170) have been extended in order to test the readiness for commercial detector wafer production, using I – V , I – V under low-e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66901f14a4fd6b40d0447b1dcbca1e7c
https://doi.org/10.1016/s0168-9002(03)01555-9
https://doi.org/10.1016/s0168-9002(03)01555-9
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 487:170-174
We present tests on the characterization of a custom-made high sensitive UV silicon detector with 16,512 pixels and 3.8 cm×2.8 cm active area. The structures were characterized for inter-pixel cross talk and dark current stability and responsivity a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d95fc158749c3c6fb0f1baf7e03972f6
https://doi.org/10.1016/s0168-9002(02)00961-0
https://doi.org/10.1016/s0168-9002(02)00961-0
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 466:115-118
Responsivity measurements have been performed on commercial silicon photodetectors in the UV range 200–400 nm. The microstrip and pixel detectors have been reverse biased in fully depleted condition (more than 25 V reverse bias) and in partially de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22d69c1037a6637344b487aae1c4b34c
https://doi.org/10.1016/s0168-9002(01)00833-6
https://doi.org/10.1016/s0168-9002(01)00833-6
Autor:
M. Caria, A. Sesselego, Luigi Barberini, S. Cadeddu, A. Lai, A. Rusani, Saverio D'Auria, A. Giannattasio, F. Dubecky
Publikováno v:
Applied Physics Letters. 81:1506-1508
The aim of the present work is to systematically investigate the response and stability of commercial GaAs devices in the 200–400 nm UV range with a view to establishing their potentiality in imaging devices. The irradiation results of GaAs detecto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59c4d7192d811e824f38f62cb83d399b
https://doi.org/10.1063/1.1497996
https://doi.org/10.1063/1.1497996
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A; 2001, Vol. 466 Issue: 1 p115-118, 4p
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Autor:
Melis, Gb, Fruzzetti, F, Paoletti, Am, Strigini, FRANCESCA ANNA LETIZIA, Baisi, F, Gargiulo, T, Pallotti, A, Solla, E, Sesselego, G, Fioretti, P.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3728::d8ba4a83734983e21cb54bb3933839c1
http://hdl.handle.net/11568/6603
http://hdl.handle.net/11568/6603
Publikováno v:
Annali di ostetricia, ginecologia, medicina perinatale. 99(3)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::15e826f94b7e5eb9ccbc5d9d61654d74
https://pubmed.ncbi.nlm.nih.gov/677676
https://pubmed.ncbi.nlm.nih.gov/677676