Zobrazeno 1 - 10
of 392
pro vyhledávání: '"A. Sasama"'
Autor:
Kageura, Taisuke, Sasama, Yosuke, Yamada, Keisuke, Kimura, Kosuke, Onoda, Shinobu, Takahide, Yamaguchi
Publikováno v:
Carbon 229, 119404 (2024)
The surface conductivity of hydrogen-terminated diamond is a topic of great interest from both scientific and technological perspectives. This is primarily due to the fact that the conductivity is exceptionally high without the need for substitutiona
Externí odkaz:
http://arxiv.org/abs/2310.17289
Autor:
Kageura, Taisuke, Sasama, Yosuke, Yamada, Keisuke, Kimura, Kosuke, Onoda, Shinobu, Takahide, Yamaguchi
Publikováno v:
In Carbon October 2024 229
Autor:
Sasama, Yosuke, Kageura, Taisuke, Imura, Masataka, Watanabe, Kenji, Taniguchi, Takashi, Uchihashi, Takashi, Takahide, Yamaguchi
Publikováno v:
Nature Electronics 5, 37 (2022)
Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages, temperatures and frequencies with low energy losses, and have been of increasing importance in power and high-frequency electronics. However, the poor performa
Externí odkaz:
http://arxiv.org/abs/2102.05982
Autor:
Sasama, Yuji, Yoshimura, Kentaro, Hoshino, Marie, Sasa, Kiyohito, Akaike, Takaaki, Morita, Masanobu, Baba, Kazuyoshi, Shirota, Tatsuo, Miyamoto, Yoichi
Publikováno v:
In Journal of Oral Biosciences March 2024 66(1):76-81
Autor:
Sasama, Yosuke, Kageura, Taisuke, Komatsu, Katsuyoshi, Moriyama, Satoshi, Inoue, Jun-ichi, Imura, Masataka, Watanabe, Kenji, Taniguchi, Takashi, Uchihashi, Takashi, Takahide, Yamaguchi
Publikováno v:
Journal of Applied Physics 127, 185707 (2020)
Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed operation. We ha
Externí odkaz:
http://arxiv.org/abs/2001.11831
Autor:
Sasama, Yosuke, Komatsu, Katsuyoshi, Moriyama, Satoshi, Imura, Masataka, Sugiura, Shiori, Terashima, Taichi, Uji, Shinya, Watanabe, Kenji, Taniguchi, Takashi, Uchihashi, Takashi, Takahide, Yamaguchi
Publikováno v:
Phys. Rev. Materials 3, 121601 (2019)
Diamond has attracted attention as a next-generation semiconductor because of its various exceptional properties such as a wide bandgap and high breakdown electric field. Diamond field effect transistors, for example, have been extensively investigat
Externí odkaz:
http://arxiv.org/abs/1907.13500
Autor:
Nur Aini Mahmudah, Anang Widigdyo, David Kurniawan, Nur Agustin Mardiana, Aditya Wirawantoro Putra, Adiguna Sasama Wahyu Utama, Hindra Kurniawan, Panji Purnomo, Fitri Komala Sari
Publikováno v:
Turkish Journal of Agriculture: Food Science and Technology, Vol 11, Iss 2, Pp 312-317 (2023)
The protein content in egg contributes effectively to the fulfilment of nutrients in daily life at an affordable price and acceptable organoleptic properties. This study aimed to investigate the effect of anti-caking agent addition (maltodextrin and
Externí odkaz:
https://doaj.org/article/8c4c5ab3dc2343829346680a49ba6e1a
Akademický článek
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Autor:
Takahide, Yamaguchi, Sasama, Yosuke, Takeya, Hiroyuki, Takano, Yoshihiko, Kageura, Taisuke, Kawarada, Hiroshi
Publikováno v:
Review of Scientific Instruments 89, 103903 (2018)
The ionic-liquid-gating technique can be applied to the search for novel physical phenomena at low temperatures because of its wide controllability of the charge carrier density. Ionic-liquid gated field-effect transistors are often fragile upon cool
Externí odkaz:
http://arxiv.org/abs/1806.09863
Autor:
Takahide, Yamaguchi, Sasama, Yosuke, Tanaka, Masashi, Takeya, Hiroyuki, Takano, Yoshihiko, Kageura, Taisuke, Kawarada, Hiroshi
We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces where hole carriers are accumulated using an ionic-liquid-gated field-effect-transistor technique. Unexpectedly, the observed magnetoresistance is positiv
Externí odkaz:
http://arxiv.org/abs/1605.05035