Zobrazeno 1 - 10
of 56
pro vyhledávání: '"A. Saher Helmy"'
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2006, 288, pp.53. ⟨10.1016/j.jcrysgro.2005.12.048⟩
Journal of Crystal Growth, Elsevier, 2006, 288, pp.53. ⟨10.1016/j.jcrysgro.2005.12.048⟩
International audience; Photoluminescence (PL) and Raman spectroscopy were devised to study bandgap gratings fabricated in a waveguide with a core consisting of GaAs/AlAs short superlattice (SSL) structure using quantum well intermixing (QWI). The sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::358dc61fd100f73b618c9c424af0d7d9
https://doi.org/10.1016/j.jcrysgro.2005.12.048
https://doi.org/10.1016/j.jcrysgro.2005.12.048
Autor:
Guoliang Li, John H. Marsh, Jinghua Teng, Z. H. Zhang, Soo Jin Chua, A. Saher Helmy, Y. H. Huang
Publikováno v:
Journal of Applied Physics. 88:3458-3462
We report that the shift in the band gap of Al0.3Ga0.7As/GaAs quantum well structures can be precisely controlled by an Al layer buried between a spin-on silica film and a wet-oxidized GaAs surface. The blueshift in wavelength of the Al0.3Ga0.7As/GaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3a6a2923e8a6af4819f9e476e280656
https://doi.org/10.1063/1.1289049
https://doi.org/10.1063/1.1289049
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 8:154-163
We discuss recent progress in the engineering of quantum-dot (QD) lasers, focusing on the spectral output, dynamics and techniques for integration. Two approaches to such engineering are discussed. Firstly, it is suggested that control of lasing spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16a23f11888412b6ea066b64d6231d1b
https://doi.org/10.1016/s1386-9477(00)00133-8
https://doi.org/10.1016/s1386-9477(00)00133-8
Autor:
John H. Marsh, O. Gunawan, Y. C. Chan, Y. L. Lam, T. K. Ong, Boon S. Ooi, A. Saher Helmy, Y. Zhou
Publikováno v:
Journal of Applied Physics. 87:2775-2779
Raman spectroscopy was used to study the spatial resolution of pulsed-photoabsorption-induced quantum-well intermixing in a GaInAs/GaInAsP laser structure. A differential band gap shift of up to 60 meV has been obtained from a sample masked with SixN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::764122be18c3207b86e73bd92debbb59
https://doi.org/10.1063/1.372255
https://doi.org/10.1063/1.372255
Autor:
John H. Marsh, Boon S. Ooi, A. Saher Helmy, Y. S. Tang, A.C. Bryce, Jacques Beauvais, M. Paquette
Publikováno v:
Journal of Applied Physics. 83:4526-4530
We report the fabrication of GaAs/AlGaAs quantum well wires using implantation of As at 45 keV to induce quantum well intermixing. The intermixing process was first characterized giving optimized annealing parameters of 875 °C for 30 s and an implan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3183bb2a83d3d597f4711a6593e696d6
https://doi.org/10.1063/1.367236
https://doi.org/10.1063/1.367236
Publikováno v:
Applied Physics Letters. 76:1582-1584
A simple technique for controlling the shift in band gap in AlGaAs/GaAs and InGaAs/GaAs quantum-well (QW) structures is reported. It involves the evaporation of a thin Ge layer and then covering it with spin-on silica followed by rapid thermal anneal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cefa1aea3a9f4c7972af794a70383c5
https://doi.org/10.1063/1.126102
https://doi.org/10.1063/1.126102
Publikováno v:
Optics express. 2(12)
Simulations of soliton emission and propagation in a linear AlGaAs waveguide with one nonlinear cladding are presented. The device, which has realistic parameters, operates below half the bandgap and emits light into the cladding for a given input po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f97ef54a8cc0abed64991442bceb84d
https://pubmed.ncbi.nlm.nih.gov/19381216
https://pubmed.ncbi.nlm.nih.gov/19381216
Publikováno v:
Applied Physics Letters. 74:3978-3980
Compositional intermixing induced by the process of impurity-free vacancy (dielectric cap annealing induced) disordering in GaAs/AlGaAs is studied using Raman spectroscopy. The degree of intermixing in multiple-quantum-well structures was detected th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::326f5255cef1786c90fe76bd86c29948
https://doi.org/10.1063/1.124242
https://doi.org/10.1063/1.124242
Autor:
S. K. Murad, J.S. Aitchison, S. E. Hicks, John H. Marsh, Chris D. W. Wilkinson, A. Saher Helmy, A.C. Bryce
Publikováno v:
Applied Physics Letters. 74:732-734
By exposing the SiO2 films used as annealing caps in the process of impurity free vacancy disordering (IFVD) to an oxygen plasma, which is produced in a reactive ion etching machine, the effect of the exposed caps on quantum well intermixing can be s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::250543f23b4dd00adf4546615af75ba8
https://doi.org/10.1063/1.123106
https://doi.org/10.1063/1.123106
Publikováno v:
Applied Physics Letters. 73:3393-3395
Spin-on silica capping has been demonstrated to be an effective dielectric encapsulant layer for quantum well (QW) intermixing at temperatures significantly lower than for conventionally deposited silica. A blueshift of up to 125 meV was observed in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d866884b60aa74f30e15d3f1da1f0630
https://doi.org/10.1063/1.122777
https://doi.org/10.1063/1.122777