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Autor:
A. Saber Hehny, Weidong Zhou, J. H. Marsh, Jayshri Sabarinathan, Donghai Zhu, P. K. Bhattacharya
Publikováno v:
1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting. IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (Cat. No.99CH37009).
We report a relatively simple technique to realize a GaAs-based quasi-3D photonic bandgap (PBG) material with an index contrast of /spl sim/2, in which a single epitaxial growth and impurity-induced layer disordering and wet oxidation steps are used.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85e2292d6eaecf122a988219f1176156
https://doi.org/10.1109/leos.1999.813566
https://doi.org/10.1109/leos.1999.813566
Publikováno v:
1999 IEEE LEOS Annual Meeting Conference Proceedings LEOS'99 12th Annual Meeting IEEE Lasers & Electro-Optics Society 1999 Annual Meeting (Cat No99CH37009); 1999, Issue 1, p236-236, 1p