Zobrazeno 1 - 5
of 5
pro vyhledávání: '"A. S. Vaskou"'
Publikováno v:
Pribory i Metody Izmerenij, Vol 6, Iss 2, Pp 249-256 (2015)
Thermal performance of electronic devices determines the stability and reliability of the equipment. This leads to the need for a detailed thermal analysis of semiconductor devices. The goal of the work is evaluation of thermal parameters of high-pow
Externí odkaz:
https://doaj.org/article/0325551ae0cc4d6a84d2c4bb8c42aad4
Autor:
A. S. Turtsevich, I. I. Rubtsevich, Ya. A. Solov’ev, A. S. Vaskou, V. K. Kononenko, A. F. Kerentsev, V. S. Niss
Publikováno v:
Russian Microelectronics. 44:579-584
An efficient method of determining thermal parameters in high-power field-effect transistors has been developed and tested based on a study of transient processes during self-heating by direct current. With the developed relaxation spectrometer of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a609140c64c96e1ec286d84814aa50d6
https://doi.org/10.1134/s1063739715080144
https://doi.org/10.1134/s1063739715080144
Publikováno v:
Metrology and Measurement Systems. 17:39-45
Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting DiodesA thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs-AlGaAs system (λst≈ 0.8 μm), GaSb-ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c292fb437cbe096605aba468bcece33
https://doi.org/10.2478/v10178-010-0004-x
https://doi.org/10.2478/v10178-010-0004-x
Publikováno v:
2013 IEEE 12th International Conference on Laser and Fiber-Optical Networks Modeling (LFNM 2013).
Analysis of the thermal resistance of power light-emitting diodes (LEDs) of Cree types is performed. Components of the thermal resistance of the diodes are determined and several distinguishes between different methods are obtained. Behavior of bottl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4866c5d362cca35d79c8222f4236e443
https://doi.org/10.1109/lfnm.2013.6644842
https://doi.org/10.1109/lfnm.2013.6644842
Publikováno v:
2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
Analysis of the thermal resistance of power light-emitting diodes (LEDs) of Cree and Rebel types is developed. Components of the thermal resistance of the diodes are determined and several distinguishes between different methods are obtained. Behavio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed58029c246b3b9ebaff51d521b0c505
https://doi.org/10.1109/eurosime.2013.6529922
https://doi.org/10.1109/eurosime.2013.6529922