Zobrazeno 1 - 10
of 17
pro vyhledávání: '"A. S. Shulenkov"'
Autor:
Nikolai A. Maleev, Yu. M. Zadiranov, A. P. Vasil’ev, V. M. Ustinov, A. G. Kuzmenkov, A. G. Gladyshev, D. E. Nazaruk, M. M. Pavlov, M. M. Kulagina, A. S. Shulenkov, M. A. Bobrov, Sergey A. Blokhin, S. I. Troshkov, A. M. Nadtochiy
Publikováno v:
Semiconductors. 47:993-996
Single-spatial-mode semiconductor vertical-cavity surface-emitting lasers (VCSELs) with a non-planar upper (output) dielectric distributed Bragg reflector (DBR) for the 850 nm spectral region are fabricated. The suggested design provides stable singl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e49c00f22ad40f6f1122399a587e0ce0
https://doi.org/10.1134/s1063782613070166
https://doi.org/10.1134/s1063782613070166
Autor:
Viacheslav N. Pavlovskii, I. Reklaitis, Tadas Malinauskas, Evgenii V. Lutsenko, M. V. Rzheutski, Kęstutis Jarašiūnas, Artūras Žukauskas, Vitalii Z. Zubialevich, Alexei S. Shulenkov, Saulius Nargelas, Arūnas Kadys, G. P. Yablonskii
Publikováno v:
physica status solidi c. 10:511-514
Excitation-intensity dependent photoluminescence (PL) as well as effective recombination time of a series of c-plane GaN layers grown on sapphire substrates were measured at room temperature. It was shown that at low excitation level a high backgroun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eca98cc3ca9a3767a29ac7608cdd89c
https://doi.org/10.1002/pssc.201200590
https://doi.org/10.1002/pssc.201200590
Autor:
S. A. Blokhin, A. S. Shulenkov, Nikolai N. Ledentsov, Ekaterina V. Nikitina, A. M. Nadtochiy, Nikolai A. Maleev, Yu. M. Zadiranov, M. M. Kulagina, V. N. Svede-Shvets, V. G. Tikhomirov, James A. Lott, A. G. Kuzmenkov, V. M. Ustinov, A. G. Gladyshev
Publikováno v:
Semiconductors. 45:818-821
Matrices of vertical-cavity surface-emitting lasers with individual addressing of elements and radiation output through a gallium arsenide substrate are implemented. Individual laser emitters with a current aperture diameter of 6–7 μm exhibit cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52ac45d665418ff66c02f9304afba963
https://doi.org/10.1134/s1063782611060133
https://doi.org/10.1134/s1063782611060133
Publikováno v:
Solid State Phenomena. :23-26
The injection magnetoresistance effect in SiO2(Co)/GaAs heterostructures, where SiO2(Co) is a granular SiO2 film containing Co nanoparticles, has been studied. This effect manifests itself in the avalanche breakdown mode and has extremely large value
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e59de62b4b9468f1bcf96b274f3cee9
https://doi.org/10.4028/www.scientific.net/ssp.168-169.23
https://doi.org/10.4028/www.scientific.net/ssp.168-169.23
Autor:
M. M. Kulagina, A. G. Kuzmenkov, Nikolai N. Ledentsov, D. A. Bedarev, A. P. Vasil’ev, A. E. Zhukov, V. M. Ustinov, S. S. Mikhrin, Yu. M. Shernyakov, Yu. M. Solov’ev, A.P. Kovsh, A. S. Shulenkov, Nikolai A. Maleev, Yu. M. Zadiranov, V. A. Bykovskii, C. Moller
Publikováno v:
Semiconductors. 37:1234-1238
Design and technology problems in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) equipped with nonconducting distributed Bragg reflectors (DBRs) and fabricated using molecular-beam epitaxy are considered. VCSELs with an active re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d0de1a2409bdcca38587952aa0d7db3
https://doi.org/10.1134/1.1619524
https://doi.org/10.1134/1.1619524
Autor:
Michael Heuken, O. Schön, V. N. Pavlovskii, A. L. Gurskii, Vitaly Z. Zubialevich, Rolf H. Jansen, V. A. Hryshanau, Y. Dikme, Harry Protzmann, A. S. Shulenkov, A.I. Stognij, E. V. Lutsenko, M. Lünenbürger, Bernd Schineller, G. P. Yablonskii
Publikováno v:
physica status solidi (c). :272-275
The electroluminescence properties of InGaN/GaN electroluminescence test heterostructures grown on sapphire and silicon substrates in the temperature interval of 300–380 K were investigated as a function of current at DC and pulsed excitation. A co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::465df06c7f84243786de9d72a9ff5af7
https://doi.org/10.1002/pssc.200390041
https://doi.org/10.1002/pssc.200390041
Autor:
H. Kanda, A.A. Melnikov, A. V. Denisenko, V. S. Varichenko, A. M. Zaitsev, A. R. Filipp, A. S. Shulenkov, V. A. Dravin, Wolfgang R. Fahrner
Publikováno v:
Journal of Applied Physics. 84:6127-6134
Electrical and optical properties of light-emitting p–i–n diodes made on natural and synthetic single-crystal diamonds were studied at temperatures up to 500 °C. The diodes were fabricated by boron (p-type doping) and lithium or phosphorous (n-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8afbbccb3b6a1e26a899929bd4c8f97
https://doi.org/10.1063/1.368880
https://doi.org/10.1063/1.368880
Publikováno v:
Physics, Chemistry and Application of Nanostructures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea2e6b3b7dc9f08e2cb307ded154e572
https://doi.org/10.1142/9789814280365_0137
https://doi.org/10.1142/9789814280365_0137
Autor:
Edik U. Rafailov, Sergey A. Blokhin, Nikolay A. Maleev, V. I. Kuchinskii, Maria Ana Cataluna, S. V. Chumak, A. G. Deryagin, V. M. Ustinov, A. G. Kuzmenkov, A. R. Kovsh, Grigorii S. Sokolovskii, A. S. Shulenkov, S. S. Mikhrin, A.D. McRobbie, Wilson Sibbett
Publikováno v:
Scopus-Elsevier
This paper reports self-sustained pulsation and electrical-to-optical signal peaking in vertical-cavity surface-emitting lasers (VCSEL) having a sub-monolayer (SML) InGaAs quantum-dot (QD) active region and tapered oxide aperture.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee90dd45730bfbaee403df85bd805727
https://doi.org/10.1109/cleoe-iqec.2007.4386013
https://doi.org/10.1109/cleoe-iqec.2007.4386013
Autor:
Y. Dikme, N. V. Rzheutski, V. N. Pavlovskii, M. Heuken, R. H. Jansen, T. S. Shul'ga, G. P. Yablonskii, A. S. Shulenkov, V. A. Hryshanau, H. Kalisch, A.I. Stognij, Bernd Schineller, A. L. Gurskii, E. V. Lutsenko
Publikováno v:
Physics, Chemistry and Application of Nanostructures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aab4f21be8308ef08f85c72659f8a083
https://doi.org/10.1142/9789812770950_0042
https://doi.org/10.1142/9789812770950_0042