Zobrazeno 1 - 10
of 11
pro vyhledávání: '"A. S. Shnitnikov"'
Publikováno v:
Semiconductors. 50:849-852
The specific features of oxygen dissolution in CdS using the example of single crystals grown by the gas-transport method with deviations from stoichiometry at 1100°C are considered. The effect of various types of intrinsic point defects in crystals
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aba0d006ae205620034f4e71f1f7755
https://doi.org/10.1134/s1063782616070174
https://doi.org/10.1134/s1063782616070174
Autor:
A. M. Gulyaev, A. S. Shnitnikov
Publikováno v:
Semiconductors. 49:209-213
The causes of anomalous behavior of the Hall mobility of charge carriers as a result of a decrease in the measurement temperature from 300 K in indium-antimonide films obtained by the method of three temperatures are studied. It is shown experimental
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98af31e52bc4b77d2e35289f295b6a91
https://doi.org/10.1134/s1063782615020098
https://doi.org/10.1134/s1063782615020098
Publikováno v:
Russian Physics Journal. 57:1436-1441
The region of the edge emission spectrum of CdS(O) single crystals with cadmium excess is examined. An anomalous series of equidistant bands with leading line at 514 nm and phonon replicas has been revealed. These bands grow in intensity with increas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4ef62e21cceaa482a5ba04a0dbe67b3
https://doi.org/10.1007/s11182-015-0400-5
https://doi.org/10.1007/s11182-015-0400-5
Autor:
A. S. Shnitnikov
Publikováno v:
Measurement Techniques. 44:876-881
Equivalent parameters of UHF switching diodes can be used to estimate the forward loss resistance. The standard method of measuring that resistance with microwaves involves difficulties and high random errors. Simulation and experimental data show th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6730ce3859fdba3dfe035041771cc318
https://doi.org/10.1023/a:1012968922950
https://doi.org/10.1023/a:1012968922950
Autor:
A. S. Shnitnikov
Publikováno v:
Measurement Techniques. 44:135-140
A method is considered for increasing the accuracy of determining the variance and correlation coefficient of the parameters of manufactured products. It is confirmed that it is efficient to utilize an autocorrelation coefficient in order to analyze
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50a1ae1d1133ea55a3d48de27b71c01a
https://doi.org/10.1023/a:1010953022527
https://doi.org/10.1023/a:1010953022527
Publikováno v:
2010 20th International Crimean Conference "Microwave & Telecommunication Technology".
2-D models are used to evaluate the influence of surface recombination on the characteristics of a microwave switch diode.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23746b0febd0740f6fec16e9fcbdce6e
https://doi.org/10.1109/crmico.2010.5632557
https://doi.org/10.1109/crmico.2010.5632557
Autor:
A. S. Shnitnikov, N.B. Gudkova
Publikováno v:
2008 18th International Crimean Conference - Microwave & Telecommunication Technology.
The properties of silicon Schottky diodes are studied using a one-dimensional physical-topological model. Diode current-voltage characteristics and detector current versus dissipated power are computed. The influence of the diode barrier height on th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad360db2aec31da88833c7ec4b65deb6
https://doi.org/10.1109/crmico.2008.4676327
https://doi.org/10.1109/crmico.2008.4676327
Autor:
A. S. Shnitnikov, N.B. Gudkova
Publikováno v:
2006 16th International Crimean Microwave and Telecommunication Technology.
The potentiality of realizing waveguide pin-diode limiter for the 5-mm wavelength range is investigated. Characteristics of Si thin-base diodes intended for limiter application are measured and discussed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e9b1132c2c4ec7af942c9f863d8da02
https://doi.org/10.1109/crmico.2006.256326
https://doi.org/10.1109/crmico.2006.256326
Autor:
N.B. Gudkova, A. S. Shnitnikov
Publikováno v:
2005 15th International Crimean Conference Microwave & Telecommunication Technology.
Numerical analysis of ultra-broadband microwave pin-diode limiters is carried out. Design considerations for the diode structure and limiter circuit are given
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9e5415c1e99c604ff7df8588443a5ba
https://doi.org/10.1109/crmico.2005.1564987
https://doi.org/10.1109/crmico.2005.1564987
Autor:
N.B. Gudkova, A. S. Shnitnikov
Publikováno v:
2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843).
The characteristics of an X-band PIN-diode limiter are presented. A one-dimensional numerical diode model is used for the analysis. The influence of the diode base thickness on the computed and measured power-limiting characteristic and on the power
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d159cd73b9d8ec45b34f6980059c1463
https://doi.org/10.1109/crmico.2004.183149
https://doi.org/10.1109/crmico.2004.183149