Zobrazeno 1 - 4
of 4
pro vyhledávání: '"A. S. Shiko"'
Autor:
Ivan Shchemerov, N. B. Smirnov, A. A. Vasilev, Patrick H. Carey, S. J. Pearton, Alexander Y. Polyakov, A. S. Shiko, A. V. Chernykh, A. I. Kochkova, In Hwan Lee, Eugene B. Yakimov, Fan Ren
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:P661-P666
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::186e9b8e4fed4eba80bc9f1e91eb69d5
https://doi.org/10.1149/2.0041911jss
https://doi.org/10.1149/2.0041911jss
Autor:
Mauro Mosca, Nicolas Grandjean, L. A. Alexanyan, P. B. Lagov, Raphaël Butté, Alexander Y. Polyakov, S. V. Chernykh, J.-F. Carlin, A. S. Shiko, Yu. S. Pavlov, Stephen J. Pearton, Camille Haller, Ivan Shchemerov, N. B. Smirnov
Publikováno v:
Journal of Applied Physics. 126:125708
Two types of near-UV light-emitting diodes (LEDs) with an InGaN/GaN single quantum well (QW) differing only in the presence or absence of an underlayer (UL) consisting of an InAlN/GaN superlattice (SL) were examined. The InAlN-based ULs were previous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b9586ae9a2cb7dee75959f89be8b6f3
https://doi.org/10.1063/1.5122314
https://doi.org/10.1063/1.5122314
Autor:
E. B. Yakimov, A. Y. Polyakov, I. V. Shchemerov, N. B. Smirnov, A. A. Vasilev, P. S. Vergeles, E. E. Yakimov, A. V. Chernykh, A. S. Shikoh, F. Ren, S. J. Pearton
Publikováno v:
APL Materials, Vol 8, Iss 11, Pp 111105-111105-6 (2020)
The photocurrent produced by 259 nm wavelength excitation was measured in β-Ga2O3 Schottky diodes before and after neutron irradiation. These samples differed by the density of deep acceptors in the lower half of the bandgap as detected by capacitan
Externí odkaz:
https://doaj.org/article/880ae276cd00401d8965e67cba56554b
Autor:
A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, E. B. Yakimov, V. I. Nikolaev, S. I. Stepanov, A. I. Pechnikov, A. V. Chernykh, K. D. Shcherbachev, A. S. Shikoh, A. Kochkova, A. A. Vasilev, S. J. Pearton
Publikováno v:
APL Materials, Vol 7, Iss 5, Pp 051103-051103-7 (2019)
Epitaxial layers of α-Ga2O3 with different Sn doping levels were grown by halide vapor phase epitaxy on sapphire. The films had shallow donor concentrations ranging from 1017 to 4.8 × 1019 cm−3. Deep level transient spectroscopy of the lowest dop
Externí odkaz:
https://doaj.org/article/62c030d840d44b248fc22aab13c1599b