Zobrazeno 1 - 10
of 11
pro vyhledávání: '"A. S. Serikkanov"'
Autor:
N. A. Chuchvaga, J. Schulze, V. V. Klimenov, K. S. Zholdybayev, K. P. Aimaganbetov, S. R. Zhantuarov, A. S. Serikkanov, E. I. Terukov, S. Zh. Tokmoldin, N. S. Tokmoldin
Publikováno v:
Известия высших учебных заведений России: Радиоэлектроника, Vol 23, Iss 5, Pp 57-62 (2020)
Introduction. Heterojunction silicon solar cells represent one of the most promising directions for the development of solar photovoltaics. This is due to both their high power conversion efficiency and reasonable likelihood for further growth in per
Externí odkaz:
https://doaj.org/article/c1c668ebcae54d1a873713b88a1ae647
Autor:
K. M. Mukashev, A. Kh. Arginova, A. D. Baisenova, B. A. Iskakov, R. A. Mukhamedshin, O. A. Novolodskaya, V. V. Piskal, V. A. Ryabov, T. Kh. Sadykov, A. S. Serikkanov, Y. M. Tautaev, V. V. Zhukov, N. N. Zastrozhnova
Publikováno v:
Physical Sciences and Technology, Vol 6, Iss 1-2 (2019)
The ionization calorimeter “Adron-55”, located at an altitude of 3340 meters above sea level, is part of the unified registration system for the shower installation of the Tian-Shan high-mountain station. The “Hadron-55” installation is a 2-t
Externí odkaz:
https://doaj.org/article/f2cd5cfbb95b44a79b598569771b8d04
Autor:
E. I. Terukov, N.S. Tokmoldin, S. Zh. Tokmoldin, S.R. Zhantuarov, K. S. Zholdybayev, N. A. Chuchvaga, A. S. Serikkanov, J. Schulze, V.V. Klimenov, K.P. Aimaganbetov
Publikováno v:
Известия высших учебных заведений России: Радиоэлектроника, Vol 23, Iss 5, Pp 57-62 (2020)
Introduction . Heterojunction silicon solar cells represent one of the most promising directions for the development of solar photovoltaics. This is due to both their high power conversion efficiency and reasonable likelihood for further growth in pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4b551c4fb37c4afd37e9e16412ee2b7
https://doi.org/10.32603/1993-8985-2020-23-5-57-62
https://doi.org/10.32603/1993-8985-2020-23-5-57-62
Publikováno v:
Technical Physics. 65:1685-1689
Wet chemical processing of single-crystal silicon wafers, including their texturing, is a key process step in the fabrication of high-efficiency solar cells. Methods of texturing single-crystal silicon wafers used in solar cell technology have been s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b966c2e1471c8fb3ae98169c29a4176
https://doi.org/10.1134/s1063784220100047
https://doi.org/10.1134/s1063784220100047
Autor:
G. A. Ismailova, Zh. K. Kalkozova, Kh. A. Abdullin, S. K. Zhumagulov, A. S. Serikkanov, V. V. Kudryashov
Publikováno v:
Technical Physics. 65:1139-1143
Nanocrystalline cobalt oxide Co3O4 and composite ZnO/Co3O4 are obtained by chemical deposition from solutions followed by thermal annealing. It is shown that the presence of zinc oxide particles during synthesis radically changes the mechanism of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aaa64acfa21d9a03a46d51fb2d32e962
https://doi.org/10.1134/s1063784220070026
https://doi.org/10.1134/s1063784220070026
Autor:
N.O. Saduyev, B.A. Iskakov, A.Kh. Argynova, V. V. Jukov, F. F. Umarov, K. M. Mukashev, A. S. Serikkanov, E. M. Tautaev, A. D. Muradov, T. X. Sadykov, N. M. Salihov, V. V. Piskal
Publikováno v:
NEWS of National Academy of Sciences of the Republic of Kazakhstan. 6:121-138
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::733595f1e865a04b05c2b05d2bb0d675
https://doi.org/10.32014/2019.2518-170x.163
https://doi.org/10.32014/2019.2518-170x.163
Autor:
N.N. Zastrozhnova, T.Kh. Sadykov, B.A. Iskakov, V. A. Ryabov, A.Kh. Arginova, Y.M. Tautaev, R. A. Mukhamedshin, O.A. Novolodskaya, K. M. Mukashev, Valeriy Zhukov, V.V. Piskal, A. S. Serikkanov, A.D. Baisenova
Publikováno v:
Physical Sciences and Technology. 6:75-83
The ionization calorimeter “Adron-55”, located at an altitude of 3340 meters above sea level, is partof the unified registration system for the shower installation of the Tian-Shan high-mountain station. The“Hadron-55” installation is a 2-tie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::156c44b3bdab37cd3d9567e83670f8c5
https://doi.org/10.26577/phst-2019-1-p10
https://doi.org/10.26577/phst-2019-1-p10
Publikováno v:
Materials Science and Engineering: C. 26:822-825
The boron gettering from nanocrystallites of porous silicon with rate significantly greater in comparison with planar structure has been for the first time observed. As a probe of gettering process, the EPR signal intensity of Pb center was used. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90d97ea79e37b14d14c1e7ed96642a74
https://doi.org/10.1016/j.msec.2005.09.020
https://doi.org/10.1016/j.msec.2005.09.020
Publikováno v:
Computational Materials Science. 33:141-144
Fourier-transform infrared (FT-IR) studies of proton-implanted silicon were performed in the temperature range 8–300 K. Samples were annealed at 670–870 K and subsequently were heat-treated at a temperature in the range of 340–570 K with follow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::155e0b76af7450c24edf63b277c86784
https://doi.org/10.1016/j.commatsci.2004.12.026
https://doi.org/10.1016/j.commatsci.2004.12.026
Autor:
B.N. Mukashev, S. Zh. Tokmoldin, A. S. Serikkanov, S.M. Kikkarin, Kh. A. Abdullin, Yu.V. Gorelkinskii
Publikováno v:
Materials Science in Semiconductor Processing. 7:447-451
Electrical and optical properties of bistable shallow donors in monocrystalline silicon, which are introduced by proton implantation followed by annealing at ∼450 °C, have been studied. The temperature dependences of equilibrium and non-equilibriu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f726233db94f4d243009a131a9f1077
https://doi.org/10.1016/j.mssp.2004.09.007
https://doi.org/10.1016/j.mssp.2004.09.007