Zobrazeno 1 - 10
of 16
pro vyhledávání: '"A. S. Rysbaev"'
Autor:
T. S. Kamilov, A. S. Rysbaev, V. V. Klechkovskaya, A. S. Orekhov, Sh. Kh. Dzhuraev, A. S. Kasymov
Publikováno v:
Eurasian Journal of Physics and Functional Materials, Vol 2, Iss 4, Pp 360-366 (2021)
The paper considers the influence of a transition amorphous layer at the interface between the higher manganese silicide (HMS) Mn 4 Si 7 and silicon doped with manganese (Si ) on the photoelectric properties of heterostructures. The role of the initi
Externí odkaz:
https://doaj.org/article/0ced00b9d18845c8bc4891a2546edfe4
Autor:
A. S. Rysbaev, S. U. Irgashev, A. S. Kasimov, D. Sh. Juraeva, J. B. Khujaniyazov, M. I. Khudoyberdieva
Publikováno v:
Eurasian Journal of Physics and Functional Materials, Vol 4, Iss 1, Pp 50-60 (2021)
The formation of nanosized films of silicides on the surface of Si (111) and Si (100) was studied by the method of low-energy ion implantation. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nan
Externí odkaz:
https://doaj.org/article/23bc6ed49faa4a2c8750aef82deb0b81
Publikováno v:
Eurasian Journal of Physics and Functional Materials, Vol 2, Iss 4, Pp 367-376 (2021)
In the method of high-phase ion implantation of P + and B + to different sides of monocrystal silicon we obtained p-i-n- structure, which has a high thermal sensitivity of 2.3 mV/K in a broad band temperature of (20 ÷ 550) K. We studied the distribu
Externí odkaz:
https://doaj.org/article/57a592ae235a47e4aa3a60f7df0705fd
Publikováno v:
Eurasian Journal of Physics and Functional Materials, Vol 3, Iss 3, Pp 254-259 (2021)
The change in the electrical properties of the Si(111) and Si(100) surfaces during ion implantation and subsequent annealing was studied. The possibilities of controlling of the electrophysical properties of the Si(111) and Si(100) surface layers by
Externí odkaz:
https://doaj.org/article/a810b115eb5e4050966d3ca1e73872e2
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 15:S211-S215
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 15:607-610
The formation of thin single-crystal films of Li, Cs, Rb, and Ba silicides, formed during the implantation of ions in Si(111) and Si(100) with a low energy (
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 14:1168-1173
The characteristics of available temperature sensors based on single crystals of silicon are analyzed and the causes of limitation of the upper range limit of the temperature are determined. To increase the sensitivity, expansion of the temperature r
Autor:
S. T. Abraeva, A. K. Tashatov, B. D. Igamov, A. S. Rysbaev, J. B. Khujaniyozov, M. T. Normuradov
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 14:816-822
Theoretical explanation of the experimentally discovered effect of a decrease in the excitation energy of surface and volume plasma oscillations of valence Si (111) electrons during the implantation of Ba and alkaline-element ions with a large dose o
Autor:
S. Rysbaev
Publikováno v:
BULLETIN Series of Philological Sciences. 72:518-524
The article considers the similarities between the methods and principles of Kyrgyz folk pedagogy and scientific pedagogy. The author explains these categories from a scientific and popular point of view. A number of similarities and differences were
Autor:
T. S. Kamilov, Vera V. Klechkovskaya, A. S. Rysbaev, I. R. Bekpulatov, B. D. Igamov, Andrey S. Orekhov
Publikováno v:
Applied Solar Energy. 55:380-384
The effect of the amorphous transition layer at the interface between Mn4Si7 and silicon doped with manganese on the photoelectric properties of heterostructures is considered. It is found that the precipitated Mn atoms on the silicon surface are gro