Zobrazeno 1 - 7
of 7
pro vyhledávání: '"A. S. Phomin"'
Publikováno v:
Semiconductors. 49:634-637
A geometric approach to revealing the characteristic signs of photoresponse from semiconductor sensor materials is presented. It is shown by the example of zinc chalcogenides that natural decomposition of the transient photoresponse into geometricall
Publikováno v:
Semiconductors. 45:153-157
It is shown that transformation of photoelectric characteristics of sensors based on Cd1 − xZnxTe (x = 0.05–0.15) crystals into parametric spectral I(λ)-dI/dλ, kinetic I(t)-dI/dt, and dynamic U-I(Δy)f, λ signatures (I(λ) is the photocurrent,
Publikováno v:
Technical Physics Letters. 35:819-822
t is established that the photocurrent spectrum I = f(λ) of a CdZnTe crystal depends on the configuration and frequency of an external electric field applied to the sample. In particular, the application of periodic field pulses in the Haar wavelet
Photocurrent spectra in parametrical form and their discrete wavelet decomposition for CdZnTe alloys
Publikováno v:
Semiconductors. 43:581-585
It is shown that the photocurrent spectrum I(λ) of the Cd1 − xZnxTe (x= 0.1–0.2) alloys can be transformed into individual subsets of the approximation Ca and detailing Cd coefficients by means of the discrete wavelet decomposition, and the dist
Autor:
Valeriy Mygal, A. S. Phomin
Publikováno v:
Technical Physics Letters. 32:484-486
Experiments give evidence of the spectral and spatial instabilities of the photoresponse in CdZnTe crystals, which are caused by the transformation of fields created by ensembles of structural defects of various types and scales. Wavelet analysis of
Autor:
Valeriy Mygal, A. S. Phomin
Publikováno v:
Semiconductors. 40:403-405
The spectral, temporal, and spatial instabilities of the photoelectric response I of CdZnTe crystals with a variety of structural inhomogeneities are revealed. It is shown that the character and interrelation of these instabilities are most pronounce
Publikováno v:
Semiconductors. 40:128-130
Variety and distribution of structural defects, as well as composition fluctuations determine individual properties and instability of photoresponse I of the Cd1−xZnxTe-based detectors and spectrometers under severe operational conditions. It is sh