Zobrazeno 1 - 10
of 37
pro vyhledávání: '"A. S. Pavluchenko"'
Autor:
V. G. Potapenko, A. V. Klimovich, M. Yu. Pervakova, S. V. Lapin, O. V. Goloshchapov, A. K. Titov, E. A. Surkova, E. S. Pavluchenko, N. A. Potikhonova, N. V. Vinogradova, E. V. Doguzhieva, G. V. Kachenya, D. D. Avdoshina, I. P. Fedunyak, V. V. Ryabchikova, T. G. Kulibaba, A. V. Rysev, E. V. Karyagina, N. V. Мedvedeva
Publikováno v:
Онкогематология, Vol 15, Iss 4, Pp 52-64 (2020)
Background. Secondary hemophagocytic lymphohystiocytosis (sHLH) is a hyperinflammatory reaction provoked by some trigger (cancer, autoimmune or infection). The majority of affected patients are at high risk of fatal multiple organ failure without get
Externí odkaz:
https://doaj.org/article/c9c0d6634f6a43569a5d3b1cdcf15153
Autor:
A. V. Mamykin, O. L. Kukla, A. S. Pavluchenko, L. M. Matvienko, I. V. Mogylnyi, A. A. Pud, N. A. Ogurtsov, Yu. V. Noskov
Publikováno v:
Sensor Electronics and Microsystem Technologies. 19:55-69
This work is devoted to the study of sensory properties of nanocomposites of electrically conductive polymers towards a number of phosphorus and organochlorine volatile compounds that are simulators of toxic gaseous substances, as well as nitroaromat
Publikováno v:
Semiconductors. 56:85-90
Autor:
O. S. Pavluchenko, О. L. Kukla
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 3-4, Pp 36-44 (2021)
Solid-state ion selective transducers, as an alternative to the traditional liquid electrolyte-filled glass electrodes, are known for over four decades now, and find their use in various areas of industry and applied science, such as in vivo analysis
Publikováno v:
Semiconductors. 55:438-445
Autor:
A. S. Pavluchenko, A. L. Kukla
Publikováno v:
Технология и конструирование в электронной аппаратуре. :3-10
This paper is a continuation of the previously published work by the same authors, where general principles of the ionometric transducer design utilizing solid-state ion-sensitive electrodes (ion-sensitive field effect transistors, ISFETs) that can s
Publikováno v:
Semiconductors. 54:1310-1314
A relief on the surface of GaN previously released from the growth substrate is formed by a combined method in which reactive ion etching is used in combination with liquid etching (in KOH or hydrochloric-acid solutions). The dependence of obtained r
Publikováno v:
Semiconductors. 54:672-676
The kind of profile produced during the reactive ion etching of AlGaInN light-emitting-diode (LED) heterostructures on the surface that became free after removal of the growth substrate is studied in relation to the composition of the gas mixture use
Publikováno v:
Semiconductors. 53:1033-1037
The influence of a SiO2 layer deposited onto nanostructured transparent conductive films of indium and tin oxide (ITO) on their optical characteristics is investigated. For this purpose, SiO2 films of various thicknesses are deposited by magnetron sp
Publikováno v:
Semiconductors. 53:172-179
A technique for forming transparent conducting indium-tin-oxide films for applications, which require high current densities, are considered. These films have to combine a good surface conductivity with an increased transmittance of radiation within