Zobrazeno 1 - 10
of 117
pro vyhledávání: '"A. S. Pashchenko"'
Publikováno v:
Advanced Engineering Research, Vol 13, Iss 5-6, Pp 77-84 (2013)
The physical and mathematical mass-transfer model of the ion-beam crystallization method is developed. The derivatization of photoactive structures Si(n+)/Si(p)/Si(p+) on 100 mm substrates through ion-beam crystallization is considered. The optimum c
Externí odkaz:
https://doaj.org/article/aa1617ad7fdc423fb3e60d87f4fd99ad
Publikováno v:
Journal of Nanotechnology, Vol 2016 (2016)
A new ion-beam sputtering technique for obtaining self-assembled InAs quantum dots on GaAs (001) substrates is proposed. The current paper demonstrates that a temperature increase in a range from 450 to 550°C at ion current of 120 μA and energy of
Externí odkaz:
https://doaj.org/article/3e36ac49acdc4adfab0c55f74977e565
Autor:
Oleg V. Devitsky, Alexey A. Zakharov, Leonid S. Lunin, Igor A. Sysoev, Alexander S. Pashchenko, Dmitry S. Vakalov, Oleg M. Chapura
Publikováno v:
Конденсированные среды и межфазные границы, Vol 24, Iss 3 (2022)
We present the results of the study of the structure and surface morphology of InxGa1–xAs thin films on a GaAs substrate. Thin films were obtained by magnetron sputtering from a specially formed In0.45Ga0.55As target in an argon atmosphere. The ob
Externí odkaz:
https://doaj.org/article/cf9bf58e010c49108895fb4bec11e805
Autor:
L. S. Lunin, M. L. Lunina, D. L. Alfimova, A. S. Pashchenko, O. S. Pashchenko, A. V. Donskaya
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 17:419-425
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca443f2cdbe5dd17a2884731ae648d4c
https://doi.org/10.1134/s1027451023020301
https://doi.org/10.1134/s1027451023020301
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 2794-2801 (2018)
This work reports on an experimental investigation of the influence of vertical stacking of quantum dots, the thickness of GaAs potential barriers, and their isovalent doping with bismuth on the photoluminescence properties of InAs/GaAs heterostructu
Externí odkaz:
https://doaj.org/article/c23a7ce5b4e84d48adc1f4fbe8a25044
Autor:
L. S. Lunin, M. L. Lunina, D. L. Alfimova, A. S. Pashchenko, N. A. Yakovenko, O. S. Pashchenko
Publikováno v:
Technical Physics Letters. 48:82-85
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d8461f68d5884882f5cb088bbb6fc06
https://doi.org/10.1134/s1063785022030087
https://doi.org/10.1134/s1063785022030087
Autor:
Sergei N. Chebotarev, Alexander S. Pashchenko, Leonid S. Lunin, Elena N. Zhivotova, Georgy A. Erimeev, Marina L. Lunina
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 8, Iss 1, Pp 12-20 (2017)
The features of InAs quantum dots obtained on GaAs(001) single-crystal substrates by ion-beam sputtering were investigated. It has been shown that in the range of ion energies of 150 to 200 eV at a temperature of 500 °C and a beam current of 120 µA
Externí odkaz:
https://doaj.org/article/900e9b5fa40e416bb164ff9b82da6ecf
Autor:
D. L. Alfimova, M. L. Lunina, L. S. Lunin, A. S. Pashchenko, O. S. Pashchenko, M. S. Stolyarov
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 15:1290-1295
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68fd5c288c3b64850c11607b2ad3d4c5
https://doi.org/10.1134/s1027451021060276
https://doi.org/10.1134/s1027451021060276
Autor:
P. S. Pashchenko, O. O. Karamushka
Publikováno v:
Odesa National University Herald. Geography and Geology. 26:165-174
Problem Statement and Purpose. The structure of the fracturing coal in the zones of geological disturbances is one of factors of origin of the gas dynamic phenomena,including spontaneous combustion of coal layers. The purpose of this work is definiti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c049eec3671c5e3b4d98db48d957994
https://doi.org/10.18524/2303-9914.2021.2(39).246201
https://doi.org/10.18524/2303-9914.2021.2(39).246201
Publikováno v:
Наукові праці Державного науково-дослідного інституту випробувань і сертифікації озброєння та військової техніки. :73-78
The article highlights the main aspects and features of the algorithm of aviation equipment operation "condition-based" with the use of ground technical means of control and on-board measuring systems and the formation of decision- making principles
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::851a8f00d88e4d9897877ce242e27e53
https://doi.org/10.37701/dndivsovt.9.2021.10
https://doi.org/10.37701/dndivsovt.9.2021.10