Zobrazeno 1 - 10
of 123
pro vyhledávání: '"A. S. Nasibov"'
Publikováno v:
Bulletin of the Lebedev Physics Institute. 47:157-161
The dependence of the threshold intensity of the electron beam (EB) on the pulse shape and duration upon lasing excitation in a laser semiconductor target (ST) is considered. It is shown that a minimum EB threshold intensity can be reached before the
Autor:
S. A. Shunailov, A. G. Sadykova, M. I. Yalandin, A S Nasibov, Marat R. Ul'maskulov, I. D. Tasmagulov, K. V. Berezhnoi
Publikováno v:
Instruments and Experimental Techniques. 62:817-822
—A complex of equipment for diagnosing the parameters of laser radiation of semiconductor targets, which are excited by high-frequency-modulated electron-beam pulses, is described. The ability to control the shape and duration of laser radiation in
Autor:
M. B. Bochkarev, A. G. Sadykova, K. A. Sharypov, I. D. Tasmagulov, A S Nasibov, K. V. Berezhnoy, V. G. Bagramov
Publikováno v:
Bulletin of the Lebedev Physics Institute. 46:1-4
The dependence of the pulse shape of laser radiation of a CdS semiconductor target on the parameters of the exciting subnanosecond electron beam (EB) is studied. The effect of the time to reach the threshold excess carrier density (ECD) on the laser
Autor:
V. A. Podvyznikov, V. K. Chevokin, A S Nasibov, V. G. Bagramov, I. D. Tasmagulov, G. L. Danielyan
Publikováno v:
Bulletin of the Lebedev Physics Institute. 45:108-111
A configuration of the multichannel system for diagnostics of radiative processes in various regions of the discharge appearing in semiconductors in response to high-voltage pulses is considered. The system allows real-time recording of spectra, dyna
Autor:
M. I. Yalandin, M. B. Bochkarev, K. V. Berezhnoi, S. A. Shunailov, B. I. Vasil’ev, V. G. Bagramov, A. G. Sadykova, A S Nasibov
Publikováno v:
Instruments and Experimental Techniques. 60:710-715
The results of the excitation of СdS semiconductor targets by a subnanosecond electron beam (EB) with an electron energy of 60–230 keV are presented. The maximum intensity of laser radiation from targets for a 1-mm EB diameter exceeded 107 W/cm2 a
Autor:
A. G. Sadykova, M. I. Yalandin, S. A. Shunailov, M. B. Bochkarev, A S Nasibov, K. V. Berezhnoy
Publikováno v:
Bulletin of the Lebedev Physics Institute. 44:13-16
Laser radiation excited in a cadmiumsulfide semiconductor target (ST) (λ = 522 nm) by a high-intensity subnanosecond electron beam (EB) with an energy of 70–150 keV has a maximum intensity of 3 · 107W/cm2 at an efficiency of~10%. Lasing arose at
Autor:
A. S. Nasibov, K. V. Berezhnoi, I. D. Tasmagulov, M. I. Yalandin, A. G. Sadykova, M. R. Ul’maskulov, S. A. Shunailov
Publikováno v:
Instruments and Experimental Techniques. 63:435-435
Publikováno v:
Quantum Electronics. 45:521-526
Transmission spectra of a ZnSe sample diffusion-doped with Fe2+ ions have been measured in the wavelength range 500 – 7000 nm. A broad absorption band in the range 500 – 1500 nm has been observed in both doped and undoped regions of the sample. T
Autor:
Elmira S. Gulyamova, Peter V. Shapkin, Alexander S. Nasibov, Nikolai N Il'ichev, Alexander V. Kir'yanov
Publikováno v:
Optics and Photonics Journal. :15-27
An experimental study of the nonlinear changes in refractive index and transmission coefficient of single-crystal ZnSe:Fe2+, fabricated through the Fe-diffusion method, at long-pulse (~300 ns), sub-mJ, 2.94-mm Z-scan probing is reported. As well, a t
Publikováno v:
Quantum Electronics. 44:213-216
The linear and nonlinear transmission of Fe{sup 2+}:ZnSe crystals is measured at a wavelength of 2940 nm in the temperature range 20 – 220 °C. It is found that, with increasing temperature from 20 °C to 150 – 220 °C, the transmission of Fe{sup