Zobrazeno 1 - 2
of 2
pro vyhledávání: '"A. S. Kagarmanov"'
Publikováno v:
Semiconductors. 43:1356-1362
Electroluminescence spectra of a light-emitting diode’s structure based on InGaN alloy with an In content of 11% were studied at a fixed current in the temperature range of 93–323 K. It was found that the electroluminescence spectra contain two p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97516f6d0e362bc33dcb641b9a1d2c7e
https://doi.org/10.1134/s1063782609100182
https://doi.org/10.1134/s1063782609100182
Publikováno v:
Semiconductors. 43:440-446
A model of generalized generation-recombination theory is proposed for semiconductors with nanoscale disorder. Application of the developed recombination model made it possible to determine the parameters characterizing localization of electronic sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e5efccee80cc98f20baefb5d5d9a6bf
https://doi.org/10.1134/s1063782609040071
https://doi.org/10.1134/s1063782609040071