Zobrazeno 1 - 10
of 34
pro vyhledávání: '"A. S. Grashchenko"'
Autor:
Yu. A. Eremeev, M. G. Vorobev, A. S. Grashchenko, A. V. Semencha, A. V. Osipov, S. A. Kukushkin
Publikováno v:
Physics of the Solid State. 64:511-515
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::182785c4e353c5988b7c4c6d52db464b
https://doi.org/10.1134/s1063783422110038
https://doi.org/10.1134/s1063783422110038
Autor:
Sviatets, Sergey A. Kukushkin, Lev K. Markov, Alexey S. Pavlyuchenko, Irina P. Smirnova, Andrey V. Osipov, Alexander S. Grashchenko, Andrey E. Nikolaev, Alexey V. Sakharov, Andrey F. Tsatsulnikov, Genadii V.
Publikováno v:
Coatings; Volume 13; Issue 7; Pages: 1142
This paper proposes a new type of substrate for manufacturing LEDs based on AlInGaN heterostructures. Instead of depositing SiC layers on the surface of Si using the conventional method, a new method involving the coordinated substitution of atoms (M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::a4a345f082c38ff2bf09116fc374540f
Vacancy growth of monocrystalline SiC from Si by the method of self-consistent substitution of atoms
Publikováno v:
Catalysis Today. :375-378
A modified technique for the growth of silicon carbide from silicon by the method of self-consistent substitution of atoms is proposed, which makes it possible to increase the achievable thickness of the formed silicon carbide layer by about an order
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d91b7e09eed894d372603b3faccecab
https://doi.org/10.1016/j.cattod.2021.08.012
https://doi.org/10.1016/j.cattod.2021.08.012
Autor:
L. K. Markov, S. A. Kukushkin, I. P. Smirnova, A. S. Pavlyuchenko, A. S. Grashchenko, A. V. Osipov, G. V. Svyatets, A. E. Nikolaev, A. V. Sakharov, V. V. Lundin, A. F. Tsatsulnikov
Publikováno v:
Technical Physics Letters. 48:31-34
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a64ebe68938d60d670adad8e865ad0e7
https://doi.org/10.1134/s1063785022020043
https://doi.org/10.1134/s1063785022020043
Publikováno v:
Technical Physics Letters. 48:62-65
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::482075b7c979666fca3786d30364e4f1
https://doi.org/10.1134/s1063785022030038
https://doi.org/10.1134/s1063785022030038
Autor:
L. I. Guzilova, A. S. Grashchenko, P. N. Butenko, A. V. Chikiryaka, A. I. Pechnikov, V. I. Nikolaev
Publikováno v:
Technical Physics Letters. 47:709-713
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a343d6c0123a8ecdcb10ab1fdfc0a8c9
https://doi.org/10.1134/s106378502107021x
https://doi.org/10.1134/s106378502107021x
Autor:
Andrey Osipov, Sh. Sh. Sharofidinov, S. A. Kukushkin, A. V. Kandakov, A. S. Grashchenko, E. V. Osipova, K. P. Kotlyar, Evgeniy Ubyivovk
Publikováno v:
Physics of the Solid State. 63:442-448
The phenomenon of self-organized change in the composition of epitaxial layers of the AlxGa1 ‒ xN solid solution during their growth by chloride-hydride epitaxy on SiC/Si(111) hybrid substrates is discovered using spectral ellipsometry, Raman spect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2415b3a93346929eeb8827ea1f455f52
https://doi.org/10.1134/s1063783421030100
https://doi.org/10.1134/s1063783421030100
Publikováno v:
Journal of Automation and Information sciences. 2:5-10
We consider one method of solving the problem of mathematical safe on certain graphs called parametric. Its gist consist in denoting some variables, corresponding to graph vertices, by certain parameters. Other unknown variables are expressed through
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c64b9f1880da23b25805b8a51d868aeb
https://doi.org/10.34229/0572-2691-2021-2-1
https://doi.org/10.34229/0572-2691-2021-2-1
Publikováno v:
Technical Physics Letters. 46:1012-1015
A method for coating of a profiled Si surface with a SiC layer, which completely retains the initial morphology of the Si surface, is developed. The SiC synthesis conditions are determined at which the initial profile of the Si surface is transformed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20e3bca14d892725a11311a091b1eb45
https://doi.org/10.1134/s1063785020100235
https://doi.org/10.1134/s1063785020100235
Autor:
A. O. Lebedev, V. V. Luchinin, A. N. Gorlyak, A. S. Grashchenko, M. F. Panov, S. A. Kukushkin, A. V. Osipov, A. V. Markov
Publikováno v:
Technical Physics Letters. 46:763-766
The results of hardness and Young’s modulus study of near-surface layers of 4H-SiC hexagonal silicon carbide obtained by the modified Lely method from the C-face (000 $$\bar {1}$$ ) and Si-face (0001) at shallow depths of the indenter are presented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c79f605162c4f0497341f1986474cf0c
https://doi.org/10.1134/s106378502008012x
https://doi.org/10.1134/s106378502008012x