Zobrazeno 1 - 10
of 25
pro vyhledávání: '"A. S. Gouralnik"'
Publikováno v:
Journal of Alloys and Compounds. 778:514-521
Formation of magnesium silicides on amorphous silicon by deposition of Mg at room temperature is studied by electron energy loss spectroscopy, differential reflectance spectroscopy and high resolution transmission electron microscopy. Optimal crystal
Autor:
A. Yu. Ustinov, A. M. Maslov, S. A. Dotsenko, S. A. Kitan, Alexander V. Shevlyagin, Andrey V. Gerasimenko, A. S. Gouralnik, E. A. Koblova, Igor M. Chernev, N. G. Galkin, Konstantin N. Galkin, V. M. Il'yashenko
Publikováno v:
Applied Surface Science. 439:282-284
Autor:
Anton K. Gutakovskii, Alexander Yu. Ustinov, Alexander V. Shevlyagin, Alexander S. Gouralnik, Igor M. Chernev, Andrey V. Gerasimenko
Publikováno v:
Materials Chemistry and Physics. 258:123903
Mg2Si films have been grown on Si(111) and Si(001) surfaces at ~ 387–477 °C by ultra-fast deposition in vacuum. The original pulse-type evaporator used allows Mg deposition rates of ~103–104 nm/s which provide effective accumulation of Mg on hot
Autor:
Alexander V. Shevlyagin, A. S. Gouralnik, N. G. Galkin, V. S. Plotnikov, S. V. Vavanova, S.A. Dotsenko, Ko-Wei Lin, A. K. Gutakovski, E. V. Pustovalov, A. I. Cherednichenko, M. A. Neklyudova
Publikováno v:
physica status solidi c. 10:1742-1745
Autor:
A. S. Gouralnik, N. G. Galkin, Vitaliy Ivanov, Vladimir S. Plotnikov, M. A. Neklyudova, S. A. Dotsenko, A. K. Gutakovski, A. I. Cherednichenko, E. V. Pustovalov
Publikováno v:
Applied Physics A. 112:507-515
A thin iron film deposited at the rate of 103 nm/sec on the Si(001) surface and a sandwich structure silicon/iron/Si(111) are studied by Surface Magneto-Optic Kerr Effect, High Resolution Electron Microscopy and X-ray Photoelectron Microscopy methods
Autor:
A. I. Cherednichenko, Vladimir S. Plotnikov, A. S. Gouralnik, E. V. Pustovalov, Vitaliy Ivanov, N. G. Galkin
Publikováno v:
Thin Solid Films. 519:8520-8523
Ultrafast-deposition and a-Si precursor or cap layer are analyzed as possible approaches to the control upon interface intermixing and film growth process. A simple and effective design is delivered providing deposition rates up to 10 4 nm/s. XPS res
Publikováno v:
Solid State Communications. 149:1292-1295
It is demonstrated by the Surface Magneto-Optic Kerr Effect and Differential Reflectance Spectroscopy methods that structures free of magnetically dead layers can be created by the deposition of iron at room temperature onto a prefabricated magnetic
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 7:167-172
Electrical properties of thin iron films deposited at room temperature both on clean Si(100) and prefabricated surface phase Si(100)-c(4×12)-Al were studied by means of in situ Hall effect registration and conductance measurements. It was shown that
Autor:
V. O. Polyarnyi, D. L. Goroshko, A. S. Gouralnik, S. V. Vavanova, I. V. Louchaninov, N. G. Galkin
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 3:97-106
Processes of β-FeSi2 nanosize islands growth on Si(111)7× 7 surface and Si(111)-Cr surface phases and silicon growth over β-FeSi2 nanosize islands have been studied by LEED, in situ electrical measurements and ex situ atomic force microscopy. The
Publikováno v:
Thin Solid Films. :199-203
The self-organisation process of semiconductor iron disilicide (β-FeSi 2 ) nanosize island formation during iron deposition at 475°C on silicon (111) substrates, in the Fe thickness range 0-2.0 nm, has been studied by AES and EELS methods. Basing o