Zobrazeno 1 - 5
of 5
pro vyhledávání: '"A. S. Drenin"'
Publikováno v:
Rocket-space device engineering and information systems. 8:99-103
The paper analyses the possibility to reduce the sensitivity of silicon integrated circuits (ICs) to single radiation effects by means of radiation-thermal treatment including irradiation in charged particle accelerators and subsequent low-temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf770c55612f15b9022ecf5c32920f34
https://doi.org/10.30894/issn2409-0239.2021.8.3.99.103
https://doi.org/10.30894/issn2409-0239.2021.8.3.99.103
Autor:
Alexander S. Samardak, I. A. Tkachenko, A. S. Drenin, A. N. Dran’kov, A. N. Fedorets, E. K. Papynov, Ivan G. Tananaev, A. V. Ognev, I. Yu. Buravlev, E. B. Merkulov, V. Yu. Mayorov
Publikováno v:
Russian Journal of Inorganic Chemistry. 65:820-828
The study describes direct precipitation, original template, and additional thermal reduction methods for the synthesis of materials based on cobalt oxides and their composites, promising as magnetic sorbents for the selective extraction and preconce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfa2f28f92fc7c69b234cf2325f9aa8b
https://doi.org/10.1134/s0036023620060157
https://doi.org/10.1134/s0036023620060157
Autor:
E. S. Rogovsky, P. B. Lagov, A. S. Drenin, Vitalii A. Bondariev, Vladimir M. Maslovsky, Yu. S. Pavlov
Publikováno v:
High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes. 23:57-70
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b9819bdcfc30f423656130868fb9910
https://doi.org/10.1615/hightempmatproc.2019029959
https://doi.org/10.1615/hightempmatproc.2019029959
Autor:
S. J. Pearton, A. A. Vasilev, Yu. S. Pavlov, Minghan Xian, O. G. Gorbatkova, N. B. Smirnov, E. M. Ivanov, Fan Ren, M. E. Letovaltseva, Eugene B. Yakimov, A. V. Chernykh, Ivan Shchemerov, Jihyun Kim, Alexander Y. Polyakov, P. B. Lagov, A. S. Drenin, A. I. Kochkova
Publikováno v:
Journal of Applied Physics. 130:185701
The changes of electrical properties and deep trap spectra induced in n-type β-Ga2O3 by 1 GeV protons with a fluence of 4 × 1013 cm−2 were studied. The carrier removal rates were ∼100 cm−1 at this energy. For comparison, for 20 MeV proton irr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34c23eb6aa8c53da157e78b6b53ead1a
https://doi.org/10.1063/5.0068306
https://doi.org/10.1063/5.0068306
Publikováno v:
Journal of Physics: Conference Series. 830:012152
Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery "snap-less" behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04af4fca57bfc1a864d340578584bd42
https://doi.org/10.1088/1742-6596/830/1/012152
https://doi.org/10.1088/1742-6596/830/1/012152