Zobrazeno 1 - 10
of 85
pro vyhledávání: '"A. S. Dragunova"'
Autor:
Vladislav V. Andryushkin, Anna S. Dragunova, Sergey D. Komarov, Alexey M. Nadtochiy, Andrey G. Gladyshev, Andrey V. Babichev, Alexander V. Uvarov, Innokenty I. Novikov, Evgenii S. Kolodeznyi, Leonid Ya. Karachinsky, Natalia V. Kryzhanovskaya, Vladimir N. Nevedomskii, Anton Yu. Egorov, Vladislav E. Bougrov
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 22, Iss 5, Pp 921-928 (2022)
The results of the study of the optical properties of low-density InGaPAs quantum dots, as well as the effect of low temperatures and thermal annealing parameters on their optical and structural properties were presented. InGaPAs quantum dots were fo
Externí odkaz:
https://doaj.org/article/767f65f8e2974eb19d57bbb18aeb31cf
Autor:
Vladislav O. Gridchin, Liliia N. Dvoretckaia, Konstantin P. Kotlyar, Rodion R. Reznik, Alesya V. Parfeneva, Anna S. Dragunova, Natalia V. Kryzhanovskaya, Vladimir G. Dubrovskii, George E. Cirlin
Publikováno v:
Nanomaterials, Vol 12, Iss 14, p 2341 (2022)
GaN nanowires were grown using selective area plasma-assisted molecular beam epitaxy on SiOx/Si(111) substrates patterned with microsphere lithography. For the first time, the temperature–Ga/N2 flux ratio map was established for selective area epit
Externí odkaz:
https://doaj.org/article/fdfaf785cc964d15beac85ae7e79a4cd
Autor:
A. E. Zhukov, N. V. Kryzhanovskaya, E. I. Moiseev, A. S. Dragunova, A. M. Nadtochiy, M. V. Maximov, N. Yu. Gordeev
Publikováno v:
Semiconductors. 56:139-144
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a7d695b7019964440b7c185da296145
https://doi.org/10.1134/s1063782622010195
https://doi.org/10.1134/s1063782622010195
Autor:
F. I. Zubov, M. V. Maksimov, N. V. Kryzhanovskaya, E. I. Moiseev, A. M. Nadtochiy, A. S. Dragunova, S. A. Blokhin, A. A. Vorobiev, A. M. Mozharov, S. A. Mintairov, N. A. Kalyuzhnyy, A. E. Zhukov
Publikováno v:
Technical Physics Letters. 48:90-94
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01a391de154a1a7b383d98875037494d
https://doi.org/10.1134/s1063785022030105
https://doi.org/10.1134/s1063785022030105
Autor:
N. V. Kryzhanovskaya, I. A. Melnichenko, A. S. Bukatin, A. A. Kornev, N. A. Filatov, S. A. Shcherbak, A. A. Lipovskii, A. S. Dragunova, M. M. Kulagina, A. I. Likhachev, M. V. Fetisova, I. V. Reduto, M. V. Maximov, A. E. Zhukov
Publikováno v:
Technical Physics Letters. 48:74-77
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2eb7bdb7e7365b11ed68a99514e04aac
https://doi.org/10.1134/s1063785022030063
https://doi.org/10.1134/s1063785022030063
Autor:
Alexey E. Zhukov, Natalia V. Kryzhanovskaya, Eduard I. Moiseev, Anna S. Dragunova, Mingchu Tang, Siming Chen, Huiyun Liu, Marina M. Kulagina, Svetlana A. Kadinskaya, Fedor I. Zubov, Alexey M. Mozharov, Mikhail V. Maximov
Publikováno v:
Materials, Vol 13, Iss 10, p 2315 (2020)
An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on a silicon substrate was used to fabricate injection microdisk lasers of different diameters (15–31 µm). A post-growth process includes photolithography and deep dry etchi
Externí odkaz:
https://doaj.org/article/83562d5c96fc4ed59349549cb2c26770
Autor:
A. E. Zhukov, E. I. Moiseev, A. M. Nadtochii, A. S. Dragunova, N. V. Kryzhanovskaya, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyi, F. I. Zubov, M. V. Maksimov
Publikováno v:
Technical Physics Letters. 47:685-688
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b238fdfcd03efda826e69d396ee6d4c9
https://doi.org/10.1134/s1063785021070142
https://doi.org/10.1134/s1063785021070142
Autor:
V. O. Gridchin, R. R. Reznik, K. P. Kotlyar, V. V. Lendyashova, A. S. Dragunova, D. A. Kirilenko, N.V. Kryzhanovskaya, G. E. Cirlin
Publikováno v:
2022 International Conference Laser Optics (ICLO).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a498e4a9c9966c0b45fcc45577e954a9
https://doi.org/10.1109/iclo54117.2022.9839836
https://doi.org/10.1109/iclo54117.2022.9839836
Hybrid nanostructures based on InGaN nanowires with deposited Ag NPs-SiOx for visible emission range
Publikováno v:
2022 International Conference Laser Optics (ICLO).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75481e7d1b7677b6a0be46dec8f50b45
https://doi.org/10.1109/iclo54117.2022.9840126
https://doi.org/10.1109/iclo54117.2022.9840126
Autor:
N. V. Kryzhanovskaya, Alexey E. Zhukov, Mikhail V. Maximov, Alexey M. Nadtochiy, Anna S. Dragunova, Eduard Moiseev
Publikováno v:
Semiconductors. 55:250-255
Analytical expressions are presented, and, through them, the analysis of component parts of the electrical resistance of injection microdisk lasers is carried out depending on the size of the microdisk resonator, parameters of the substrate, and conf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a70c6bca806f9ed41035780ed11a3e4e
https://doi.org/10.1134/s1063782621020226
https://doi.org/10.1134/s1063782621020226