Zobrazeno 1 - 9
of 9
pro vyhledávání: '"A. S. Bergendahl"'
Autor:
C. W. Koburger, W. F. Clark, J. W. Adkisson, E. Adler, P. E. Bakeman, A. S. Bergendahl, A. B. Botula, W. Chang, B. Davari, J. H. Givens, H. H. Hansen, S. J. Holmes, D. V. Horak, C. H. Lam, J. B. Lasky, S. E. Luce, R. W. Mann, G. L. Miles, J. S. Nakos, E. J. Nowak, G. Shahidi, Y. Taur, F. R. White, M. R. Wordeman
Publikováno v:
IBM Journal of Research and Development. 39:215-227
Autor:
A. Wachtmeister, S. Bergendahl
Publikováno v:
Managing Service Quality: An International Journal. 3:19-22
Looks at the privatisation of the Swedish telecommunication company, Televerket. Considers the stiffer competition the company will face and describes how, over the last couple of years, the company has developed its own Total Quality Index to meet i
Autor:
Alan L. Levine, Albert S. Bergendahl
Publikováno v:
SPIE Proceedings.
Cost of ownership modeling is a critical and emerging tool that provides significant insight into the ways to optimize device manufacturing costs. The development of a model to deal with a particular application, mix-and-match lithography, was perfor
Autor:
Denis J Poley, Katherine C. Norris, John L. Sturtevant, Steven J. Holmes, Stephen E. Knight, Karey L. Holland, Dean Writer, Andy Horr, Mark C. Hakey, Paul A. Rabidoux, J. Guidry, Dean C. Humphrey, Diana D. Dunn, Albert S. Bergendahl, D. Macaluso
Publikováno v:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II.
Lithographers have steadily reduced exposure wavelength and increased numerical aperture (NA) to maintain process window and simplicity. The G-line systems of the 1970s gave way to the I-line systems of the late 80s, and then to the deep ultraviolet
Autor:
Stephen E. Knight, Katherine C. Norris, Steven J. Holmes, Denis J Poley, Ruth Levy, Karey L. Holland, John G. Maltabes, Albert S. Bergendahl
Publikováno v:
Optical/Laser Microlithography III.
Each DRAM design generation has required higher reoiution imaging and overlay capability. The 500-nm lithographic ground rules of a 16-Mb chip make deep-UV (DUV) an attractive alternative to,thc more stanth,rd mid-UV (MUV) photolithography presently
Publikováno v:
IBM Journal of Research and Development. 26:580-589
The development and implementation of plasma processing techniques for silicon-gate FET manufacturing applications is described. Process requirements are discussed for the stripping of photoresist and the isotropic etching of thin films. A systematic
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 4:3127-3138
Multilevel interconnections (MLIC) are the key to successful wafer scale integration (WSI). In this paper, we present a review of various approaches used in the implementation in MLIC to both monolithic WSI and wafer scale hybrid packaging. Electrica
Publikováno v:
Journal of the American Chemical Society. 91:7709-7712
Autor:
E. S. Martin, Clinton S. Bissell, William K Hatt, L. J. Mensch, F. E. Turneaure, G. S. Bergendahl, J. R. Worcester, Charles F. Marsh
Publikováno v:
Transactions of the American Society of Civil Engineers. 82:1541-1576