Zobrazeno 1 - 10
of 19
pro vyhledávání: '"A. S. Ayupov"'
Autor:
Xalmurat M. Iliyev, Vladimir B. Odzhaev, Sobir B. Isamov, Bobir O. Isakov, Bayrambay K. Ismaylov, Kutub S. Ayupov, Shahzodbek I. Hamrokulov, Sarvinoz O. Khasanbaeva
Publikováno v:
East European Journal of Physics, Iss 3, Pp 363-369 (2023)
The paper studies the properties of surface and near-surface region of a single crystalline silicon sample doped with atoms of Ga (AIII) and Sb (BV). n-type single-crystal Si wafers were chosen as substrates, and samples were size of 8×10×0.5 mm3.
Externí odkaz:
https://doaj.org/article/b7354b47283e49c39e403fe50bf86129
Autor:
Nurulla F. Zikrillaev, Kutup S. Ayupov, Manzura M. Shoabdirahimova, Feruza E. Urakova, Yoldoshali A. Abduganiev, Abdujalol A. Sattorov, Latofat S. Karieva
Publikováno v:
East European Journal of Physics, Iss 4 (2023)
One of the crucial phenomena is auto-oscillations of current in elementary and binary (AIIIBV, AIIBVI) semiconductor materials, which allow the creation of solid-state oscillators with a wide frequency range from 10-3 to 10-6 Hz. In this paper, we sh
Externí odkaz:
https://doaj.org/article/b38c35c33578496a9d6ea1d1afeaf1bd
Publikováno v:
Physical Sciences and Technology, Vol 9, Iss 1 (2022)
Currently, there is a growing need for high-performance photocells with increased stability of parameters to external influences, such as thermal and radiation resistance. This work is devoted to the study of photocells available in the volume of an
Externí odkaz:
https://doaj.org/article/118a81fa9aed4fb28820d251995a8b00
Publikováno v:
Mathematical Models and Computer Simulations. 12:378-387
The paper is devoted to the RANS/ILES high-resolution method application for studying the influence of a nonuniformity of the inflow temperature field on the throttle characteristics of a supersonic mixed compression inlet, and the intensity and spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be426478c6810921b773dcb216188ca7
https://doi.org/10.1134/s2070048220030060
https://doi.org/10.1134/s2070048220030060
Autor:
Abdrakhmanov Ildus B, L. Ya. Vasilova, Vladimir V. Zorin, Sh. M. Salikhov, Lyaysan R. Latypova, Akhat G. Mustafin, D. S. Ayupov
Publikováno v:
Russian Journal of Organic Chemistry. 55:1539-1546
The nitration, oxidative halogenation, and radical bromination and chlorination of 2-ethyl-2-methyl-2,3-dihydro-1H-indole afforded the corresponding nitro, amino, and halo derivatives. The synthesized compounds were evaluated for their antioxidant, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4667eee36087c67ba6acee8a5ff5e592
https://doi.org/10.1134/s1070428019100129
https://doi.org/10.1134/s1070428019100129
Autor:
S. B. Isamov, S. A. Tachilin, M. K. Bakhadyrkhanov, G. Kh. Mavlonov, Kh. M. Iliev, K. S. Ayupov
Publikováno v:
Technical Physics. 64:385-388
Photosensitivity of the negative magnetoresistance (NMR) of silicon containing magnetic nanoclusters of manganese atoms is revealed under background and IR (up to λ = 3 μm) irradiation at room temperature. It is shown that irradiation leads to a si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe449bea1368d736a2c07ca0e2b5d1f9
https://doi.org/10.1134/s1063784219030046
https://doi.org/10.1134/s1063784219030046
Publikováno v:
Advances in agricultural and biological sciences. :29-32
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20d5f9aa43b20a0e01fb8380670e7497
https://doi.org/10.22406/aabs-18-4.5-29-32
https://doi.org/10.22406/aabs-18-4.5-29-32
Autor:
G. Kh. Mavlonov, M. K. Bakhadyrkhanov, Kh. M. Iliev, S. B. Isamov, Z.M. Saparniyazova, K. S. Ayupov, S. A. Tachilin
Publikováno v:
Inorganic Materials. 47:479-483
We have studied the transport properties of silicon doped with manganese via low-temperature diffusion. The material exhibits colossal photoconductivity in the extrinsic region (1.5–3 μm), an abnormally high negative magnetoresistance, and a tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f929662aa22168005a33fa84d31bf884
https://doi.org/10.1134/s0020168511050062
https://doi.org/10.1134/s0020168511050062
Autor:
C. A. Tachilin, K. S. Ayupov, M. K. Bakhadirkhanov, O. E. Sattarov, G. H. Mavlonov, X. M. Iliev
Publikováno v:
Semiconductors. 48:986-988
It is shown experimentally that a rather high negative magnetoresistance in silicon is observed not only in compensated p-(Si:B):Mn, but also in overcompensated n-(Si:B):Mn with a Fermi level of F = EC − 0.35 eV ÷ EC − 0.55 eV. The magnitude and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33a619fe509361dfcf94d4b601fab0bb
https://doi.org/10.1134/s106378261408003x
https://doi.org/10.1134/s106378261408003x
Publikováno v:
Russian Microelectronics. 39:401-404
In this work, specific features of photoconductivity of silicon with multicharge nanoclusters of manganese atoms are investigated. It is shown that for such samples, anomalously high impurity photoconductivity is observed in the spectral region λ =
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbae62fd33506823754e0e0ddf48770b
https://doi.org/10.1134/s1063739710060041
https://doi.org/10.1134/s1063739710060041