Zobrazeno 1 - 6
of 6
pro vyhledávání: '"A. R. Tretola"'
Publikováno v:
Journal of Vacuum Science and Technology. 18:345-348
High conductivity gate electrode structures of sheet resistance ≲3 Ω/⧠ have been fabricated using a 2500 A (nominal) TaSi2 layer on 4500 A thick phosphorus doped polycrystalline silicon films. The TaSi2 layer was formed by cosputter depositing T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3261d13fbe114a9a6e0c41a657f3a94f
https://doi.org/10.1116/1.570756
https://doi.org/10.1116/1.570756
Publikováno v:
IEEE Journal of Solid-State Circuits. 8:373-380
Describes the use of selective oxidation and ion implantation to fabricate integrated circuits. The technique of selective oxidation is used to fabricate a `walled emitter' structure as proposed by Panousis. This allows a substantial reduction in tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc4b00f158248a95d277b968175a9699
https://doi.org/10.1109/jssc.1973.1050420
https://doi.org/10.1109/jssc.1973.1050420
Autor:
J. C. Irvin, A. R. Tretola
Publikováno v:
Journal of Applied Physics. 39:3563-3568
A thermal‐mapping technique is presented which, when applied to a p‐n junction, can locate hot spots that are only slightly warmer than surrounding regions. Among the Zn‐diffused GaAs devices to which this method has been applied, these hot spo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e69191bef3c86eeba7debe31453f8bba
https://doi.org/10.1063/1.1656824
https://doi.org/10.1063/1.1656824
Publikováno v:
Review of Scientific Instruments. 37:1689-1692
In studying the temperature variation of electrical conductivity of thin diffused layers in germanium, effects useful in thermometry have been found. For layers diffused with antimony in the range 3×1017 to 1×1018 cm−3, no impurity deionization i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fba2076eac6e89bb876e656ac0b701ed
https://doi.org/10.1063/1.1720086
https://doi.org/10.1063/1.1720086
Publikováno v:
Applied Physics Letters. 37:595-597
We have developed a novel triply modulated stimulated Raman gain spectrometer which reduces unwanted background effects by over 105. This has allowed the high resolution (Δν=1 cm−1) measurement of 20 A of Si on sapphire with a signal‐to‐noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::094f09be7361f61edd7263cd070ec9a1
https://doi.org/10.1063/1.92098
https://doi.org/10.1063/1.92098
Publikováno v:
Applied Physics Letters. 41:857-859
We report measurements of the room‐temperature drift velocity of holes along the (100) Si‐SiO2 interface (drift direction [011]) as obtained by a time‐of‐flight technique. Our measured values range up to 60% higher than previously reported va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d1c750d76d1720ed576fc43cd744153
https://doi.org/10.1063/1.93676
https://doi.org/10.1063/1.93676