Zobrazeno 1 - 10
of 11
pro vyhledávání: '"A. R. Takalkar"'
68 4.1 Introduction 68 4.2 Experimental Details 69 4.3 Results and Discussion 70 4.4 Conclusion 72 4.5 Acknowledgements 73 Keywords 73 References 731Centre for Excellence in Nano-composites, School of Mechanical and Building Sciences, VIT University,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c65331a4381fd36f6227ccb166da2d72
https://doi.org/10.1201/9781315161983-11
https://doi.org/10.1201/9781315161983-11
Autor:
Eric C. T. Harley, Z. Zhu, Judson R. Holt, Matthew W. Stoker, R. Takalkar, L. Black, Rainer Loesing, A. Chakravarti, F. Yang, Dominic J. Schepis, James Chingwei Li, Xiaolin Chen, R. Murphy, Anita Madan, Thomas N. Adam, Abhishek Dube
Publikováno v:
ECS Transactions. 28:63-71
Uniaxial tensile strain in the channel enhances electron mobility and hence the drive current in an N-type field-effect transistor (NFET). For enhancement of NFET drive current via channel strain, the incorporation of embedded silicon carbon (eSi:C)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3cbe71f67a20208ceb5421c37d5d386
https://doi.org/10.1149/1.3375589
https://doi.org/10.1149/1.3375589
Autor:
R. Takalkar, Anita Madan, Dominic J. Schepis, Eric C. Harley, Bin Yang, Abhishek Dube, Teresa L. Pinto, Zhibin Ren, Thomas N. Adam, Linda Black, Z. Zhu, Johan W. Weijtmans, Rainer Loesing, Jinghong Li, Ashima B. Chakravarti
Publikováno v:
ECS Transactions. 16:325-332
In addition to device scaling, strain engineering using SiC stressors in the S/D regions is important for nFET performance enhancement [1-3]. In this paper, we review the characterization of fully-strained epitaxial SiC and in-situ doped SiC:P films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d314f9756c2842729e426ac06916377
https://doi.org/10.1149/1.2986790
https://doi.org/10.1149/1.2986790
Autor:
Scott Luning, Ashima B. Chakravarti, Z. Zhu, A. Gehring, Anita Madan, Alexander Reznicek, Guangrui Xia, R. Takalkar, Dan Mocuta, Dominic J. Schepis, B. Yang, Thomas N. Adam, E. Leobandung, Ka Kong Chan, J. Faltermeier, J. P. de Souza, Zhibin Ren, John Li, Rohit Pal, Eric C. Harley, Edward P. Maciejewski, Brian J. Greene, Abhishek Dube, D.-G. Park, M. Cai, D. K. Sadana, Linda Black, Bin Yang, Johan W. Weijtmans, G. Pei
Publikováno v:
ECS Transactions. 16:317-323
Summary In summary, this work demonstrates that integrating ISPD eSi:C stressor in the thick-oxide long-channel nMOS source and drain is feasible. Key challenges lie in both high-quality ISPD eSi:C EPI development and modification of the conventional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::479e8a9b274b3fc5f4f083f4de0812c6
https://doi.org/10.1149/1.2986789
https://doi.org/10.1149/1.2986789
Rainwater harvesting is a technique for accumulating and storing of rainwater channelised to flow to the ponds, lakes and over- and underground storage places, which can be used not only to recharge the groundwater, but also to provide drinking water
Autor:
Herbert L. Ho, Jinping Liu, Paul C. Parries, Norman Robson, Jing Li, Puneet Goyal, S.S. Iyer, Ming Yin, Babar A. Khan, Zhengwen Li, Paul D. Agnello, K. V. Hawkins, Sunfei Fang, T. Weaver, Scott R. Stiffler, Kevin McStay, Rishikesh Krishnan, W. Davies, R. Takalkar, T. Kirihata, Sami Rosenblatt, S. Galis, A. Blauberg, Shreesh Narasimha, Michael P. Chudzik, Amanda L. Tessier, William K. Henson, W. Kong, Edward P. Maciejewski, Alberto Cestero, Nauman Zafar Butt, Joseph Ervin, S. Gupta, Jeyaraj Antony Johnson, S. Rombawa, Sungjae Lee, J. Barth, Ying Zhang
Publikováno v:
2010 International Electron Devices Meeting.
We present industry's smallest eDRAM cell and the densest embedded memory integrated into the highest performance 32nm High-K Metal Gate (HKMG) SOI based logic technology. The cell is aggressively scaled at 58% (vs. 45nm) and features the key innovat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::324242387bfae4ae688888a5d8ad886a
https://doi.org/10.1109/iedm.2010.5703434
https://doi.org/10.1109/iedm.2010.5703434
Autor:
Russell H. Arndt, Ashima B. Chakravarti, Anthony G. Domenicucci, Amanda L. Tessier, Jinping Liu, Sunfei Fang, Kevin McStay, Zhengwen Li, Randolph F. Knarr, S. Lee, Joseph F. Shepard, Herbert L. Ho, A. Arya, R. Venigalla, W. Davies, R. Takalkar, Rishikesh Krishnan, Paul C. Parries, B. Morgenfeld, Xin Li, S. Gupta, Michael P. Chudzik, Scott R. Stiffler, Puneet Goyal, Babar A. Khan, Sadanand V. Deshpande, J. Dadson, Scott D. Allen
Publikováno v:
2010 IEEE International SOI Conference (SOI).
In this paper, we describe the unique scaling challenges, critical sources of variation, and the potential trench leakage mechanisms of 32nm trench capacitors that utilize high-к/metal electrode materials. This is the first eDRAM technology that has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::923f4cfd581d96da2ab4d0cb5f97f7c8
https://doi.org/10.1109/soi.2010.5641378
https://doi.org/10.1109/soi.2010.5641378
Autor:
Roland Hahn, Katherine V. Hawkins, Oliver D. Patterson, Brian W. Messenger, Eric H. Beckmann, R. Takalkar, Xing J. Zhou
Publikováno v:
2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Embedded DRAM will play a much larger part in IBM server microprocessors for new SOI technologies. Etch of a deep trench (DT) into the substrate, which is used to form the capacitor, is a complicated multi-step process. One of the key elements is etc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1463c33054eb4504759fd291c8e9b0c1
https://doi.org/10.1109/asmc.2010.5551433
https://doi.org/10.1109/asmc.2010.5551433
Autor:
S.S. Iyer, Ravi M. Todi, Rajeev Malik, Erik A. Nelson, Rishikesh Krishnan, Sunfei Fang, Byeong Y. Kim, R. Takalkar, D. Anand, Oh-Jung Kwon, Michael P. Chudzik, Nauman Zafar Butt, Scott R. Stiffler, Herbert L. Ho, Joseph Ervin, Siddarth A. Krishnan, Babar A. Khan, Alberto Cestero, Gregory G. Freeman, Geng Wang, Karen A. Nummy, J. Sim, Amanda L. Tessier, Jin Liu, W. Kong, Paul C. Parries, Kevin McStay
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
A high performance embedded DRAM with deep trench capacitor and high performance SOI logic has been deployed in 45nm and 32nm technology nodes. Following a yield ramp of the sub-2ns latency 45nm technology, we present, for the first time, a 32nm eDRA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d6cc411a517f48787c659ad0590ab81
https://doi.org/10.1109/iedm.2009.5424375
https://doi.org/10.1109/iedm.2009.5424375
Autor:
B. Frank Yang, R. Takalkar, Z. Ren, L. Black, A. Dube, J.W. Weijtmans, J. Li, J.B. Johnson, J. Faltermeier, A. Madan, Z. Zhu, A. Turansky, G. Xia, A. Chakravarti, R. Pal, K. Chan, A. Reznicek, T.N. Adam, B. Yang, J.P. de Souza, E.C.T. Harley, B. Greene, A. Gehring, M. Cai, D. Aime, S. Sun, H. Meer, J. Holt, D. Theodore, S. Zollner, P. Grudowski, D. Sadana, D.-G. Park, D. Mocuta, D. Schepis, E. Maciejewski, S. Luning, J. Pellerin, E. Leobandung
Publikováno v:
2008 IEEE International Electron Devices Meeting.
For the first time, embedded Si:C (eSi:C) was demonstrated to be a superior nMOSFET stressor compared to SMT or tensile liner (TL) stressors. eSi:C nMOSFET showed higher channel mobility and drive current over our best poly-gate 45 nm-node nMOSFET wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4be978b7620a3fb60241f50d73353f21
https://doi.org/10.1109/iedm.2008.4796611
https://doi.org/10.1109/iedm.2008.4796611