Zobrazeno 1 - 1
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pro vyhledávání: '"A. R. Chelyadinskiĭ"'
Publikováno v:
Physics of the Solid State. 50:1433-1437
Possible suppression of the formation of residual extended defects in boron-implanted silicon is studied using a method that combines the effects of a threshold dose and annihilation of point defects on substitutional impurities. Implantation conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e06ccb1a5e848ad5f60428b52890f1f7
https://doi.org/10.1134/s1063783408080088
https://doi.org/10.1134/s1063783408080088
