Zobrazeno 1 - 10
of 74
pro vyhledávání: '"A. R. Brazis"'
Autor:
A. R. Brazis, M. F. Waltz, D. I. Thompson, E. Bredvold, D. E. Pederson, H. Bengsch, E. L. Sing, H. M. Wehr, R. T. Marshall, J. G. Phillips, C. N. Huhtanen
Publikováno v:
Journal of food protection. 40(4)
Eleven analysts tested contaminated reconstituted (1:10) dry milk powders for penicillin residues using spores of Bacillus stearothermophilus var. calidolacris (Delvotest P method). Three types of responses were noted: positive, negative, and questio
Publikováno v:
Acta Physica Polonica A. 120:1056-1060
Publikováno v:
Semiconductors. 45:148-152
The components of resistivity (ρij), Hall coefficient (Rijk), and magnetoresistance (ρij, kl) of n-Bi0.88Sb0.12 single crystals doped with tellurium to 0.01, 0.1, and 0.2 at % have been measured in the temperature range of 77–300 K. It is conclud
Autor:
R. Raguotis, R. Brazis
Publikováno v:
physica status solidi c. 6:2674-2677
This report presents new Monte Carlo simulation results revealing the ballistic stage of growth of the phonon number, electron velocity and energy upon the switching-on electric field, the shape of electron and phonon stationary distributions in high
Publikováno v:
Lithuanian Journal of Physics. 49:267-275
Autor:
R. Raguotis, R. Brazis
Publikováno v:
Acta Physica Polonica A. 113:933-936
Publikováno v:
physica status solidi (b). 244:1662-1668
Constants characterising the efficiency of far-infrared (FIR) photon coupling to phonon sum and difference combination processes are elucidated from existing experimental data in CdTe and ZnTe crystals. Two-phonon difference processes are concluded t
Publikováno v:
Acta Physica Polonica A. 109:731-741
Autor:
R. Brazis, R. Raguotis
Publikováno v:
Optical and Quantum Electronics. 38:339-347
Monte Carlo method is employed for the calculations of electron and hole transport characteristics of cubic and hexagonal GaN at T = 300 K in the fields of E ≤ 1000 kV/cm−1. It is shown that electron drift velocity and mobility is heavily reduced
Autor:
R. Brazis, R. Raguotis
Publikováno v:
Acta Physica Polonica A. 107:324-327
Electron transport characteristics of GaN crystals in high electric fields are shown to be essentially influenced by different optical phonon modes inherent to the hexagonal and cubic phases of these compound crystals. Additional optical phonon modes